ZVP2106CSTOE datasheet, PDF - EEWORLD Datasheet

ZVP2106CSTOE: DescriptionSmall Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size22KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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ZVP2106CSTOE Overview

Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, E-LINE PACKAGE-3

Parameter Name	Attribute value
Maker	Zetex Semiconductors
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.28 A
Maximum drain-source on-resistance	5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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