Small Signal Bipolar Transistor, 4A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN
| Parameter Name | Attribute value |
| Maker | Diodes Incorporated |
| Parts packaging code | TO-92 |
| package instruction | CYLINDRICAL, O-PBCY-W3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 4 A |
| Collector-emitter maximum voltage | 10 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 60 |
| JESD-30 code | O-PBCY-W3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 200 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | MATTE TIN |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | 40 |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 150 MHz |
| ZTX1047ASTOE | UZTX1047ASTOA | ZTX1047ASTOF | UZTX1047ASTOB | |
|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 4A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN | Small Signal Bipolar Transistor, 4A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN | Small Signal Bipolar Transistor, 4A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN | Small Signal Bipolar Transistor, 4A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN |
| Parts packaging code | TO-92 | TO-92 | TO-92 | TO-92 |
| package instruction | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 |
| Contacts | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 4 A | 4 A | 4 A | 4 A |
| Collector-emitter maximum voltage | 10 V | 10 V | 10 V | 10 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 60 | 60 | 60 | 60 |
| JESD-30 code | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 |
| JESD-609 code | e3 | e3 | e3 | e3 |
| Humidity sensitivity level | 1 | 1 | 1 | 1 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | 260 |
| Polarity/channel type | NPN | NPN | NPN | NPN |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal surface | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN |
| Terminal form | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | 40 | 40 | 40 | 40 |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 150 MHz | 150 MHz | 150 MHz | 150 MHz |
| Maker | Diodes Incorporated | - | Diodes Incorporated | Diodes Incorporated |
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