ZTX557STZ datasheet, PDF - EEWORLD Datasheet

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ZTX557STZ: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size79KB，2 Pages; ManufacturerDiodes Incorporated

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ZTX557STZ Overview

Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX557STZ Parametric

Parameter Name	Attribute value
Maker	Diodes Incorporated
Objectid	1810806499
Parts packaging code	TO-92
package instruction	IN-LINE, R-PSIP-W3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
compound_id	4043470
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PSIP-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	75 MHz

ZTX557STZ Preview

PNP SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTORS

ISSUE 1 JULY 94

FEATURES

* 300 Volt V

CEO

* 0.5 Amp continuous current

* P

tot

= 1 Watt

ZTX556

ZTX557

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation

Operating and Storage Temperature

Range

SYMBOL

CBO

CEO

EBO

tot

stg

ZTX556

-200

-5

-1

-0.5

1.0

E-Line

TO92 Compatible

ZTX557

-300

UNIT

°C

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

CE(sat)

BE(sat)

BE(on)

ZTX556

ZTX557

UNIT

CONDITIONS.

=-100

=-10mA*

=-100

=-160V

=-200V

=-4V

=-50mA, I

=-5mA*

=-50mA, I

=-5mA*

IC=-50mA, V

=-10V*

=-10mA, V

=-10V*

=-50mA, V

=-10V*

MHz

=-50mA, V

=-10V

f=100MHz

MIN.

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Emitter Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-on Voltage

Static Forward

Current Transfer

Ratio

Transition

Frequency

-200

-5

-0.1

-0.3

-1

300

MAX

MIN.

-300

-5

-0.1

-0.3

-1

300

MAX

3-200

ZTX556

ZTX557

TYPICAL CHARACTERISTICS

tf ts

µs µs

-0.8

/10

µs

2.0

CE(sat)

- (Volts)

=10

-0.6

1.5

-0.4

Switching time

1.0

100

-0.2

0.5

-0.1

-0.0001

-0.001

-0.01

-0.1

-1

-0.01

Collector Current (Amps)

CE(sat)

v I

Switching Speeds

100

-1.4

- Normalised Gain (%)

-1.2

=10

BE(sat)

- (Volts)

=-10V

-1.0

-0.8

-0.6

-0.0001

-0.001

-0.01

-0.1

-0.0001

-0.001

-0.01

-0.1

-1

Collector Current (Amps)

v I

1.0

BE(sat)

v I

Single Pulse Test at T

amb

=25°C

-1.2

- Collector Current (Amps)

-1.4

- (Volts)

=-10V

-1.0

0.1

-0.8

0.01

D.C.

100ms

10ms

1.0ms

100µs

-0.6

-0.0001

-0.001

-0.01

-0.1

-1

ZTX556

ZTX557

0.001

100

1000

Collector Current (Amps)

Collector Voltage (Volts)

BE(on)

v I

Safe Operating Area

3-201

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