Crystal oscillator
Epson Toyocom
Product Number (please contact us)
CRYSTAL OSCILLATOR
PROGRAMMABLE
Q3323LBxxxxxx00
SG - 8002 LB
series
•Frequency
range
:
1 MHz to 125 MHz
•Supply
voltage
:
3.3 V / 5.0 V
•Function
:
Output enable(OE) or Standby(
ST
)
•External
dimensions
:
5.0 × 3.2 × 1.2 t (mm)
•Short
mass production lead time by PLL technology.
•SG-Writer
available to purchase.
Please contact Epson Toyocom or local sales representative.
Actual size
Specifications (characteristics)
Specifications
*2
Remarks
PH
/
SH
PC
/
SC
1 MHz to 80 MHz
-
V
CC
=4.5 V to 5.5 V
Output frequency range
f
0
-
1 MHz to 125 MHz
V
CC
=3.0 V to 3.6 V
-
1 MHz to 66.7 MHz
V
CC
=2.7 V to 3.6 V
Supply voltage
V
CC
4.5 V to 5.5 V
2.7 V to 3.6 V
Storage temperature
-40
°C
to +125
°C
Store as bare product after unpacking
T_stg
Temperature
range
Operating temperature
-20
°C
to +70
°C
(-40
°C
to +85
°C)
Refer to “Outline specifications” (Frequency range)
T_use
B:
±50 ×
10
-6
,C:
±100 ×
10
-6
-20
°C
to +70
°C
Frequency tolerance
f_tol
M:
±100 ×
10
-6
*3
-40
°C
to +85
°C
-40
°C
to +85
°C,
V
CC
±5
%
*3
L:
±
50
×
10
-6
30 mA Max.
-
No load condition,
f
0
=80 MHz
Current consumption
I
CC
-
28 mA Max.
No load condition,
f
0
=125 MHz
25 mA Max.
-
P Type only,
f
0
=80 MHz
Disable current
I_dis
-
16 mA Max.
P Type only,
f
0
=125 MHz
Stand-by current
I_std
50
µA
Max.
S Type only,
ST
=GND
40 % to 60 %
-
50 % V
CC
, L_CMOS=15 pF,
≤80
MHz
45 % to 55 %
-
50 % V
CC
, L_CMOS=25 pF,
≤50
MHz
Symmetry
*1
SYM
-
40 % to 60 %
50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
≤125
MHz
-
40 % to 60 %
50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
≤66.7
MHz
-
45 % to 55 %
50 % V
CC
, L_CMOS=15 pF, V
CC
=3.0 V to 3.6 V,
≤40
MHz
High output voltage
V
OH
V
CC
-0.4 V Min.
I
OH
=-16 mA(PH,SH),-8 mA(PC,SC)
Low output voltage
V
OL
0.4 V Max.
I
OL
= 16 mA(PH,SH), 8 mA(PC,SC)
Output load condition(CMOS)
*1
L_CMOS
15 pF Max.
Max. frequency and Max. supply voltage
Output enable / disable
V
IH
2.0 V Min.
70 % V
CC
Min.
ST
terminal or OE terminal
input voltage
0.8 V Max.
20 % V
CC
Max.
V
IL
Rise time / Fall time
*1
t
r
/
t
f
3 ns Max.
20 % V
CC
to 80 % V
CC
level, L_CMOS=Max.
10 ms Max.
Time at minimum supply voltage to be 0 s
Start-up time
t_str
+25
°C,
V
CC
=5.0 V/ 3.3 V (PC
/
SC) First year
±5 ×
10
-6
/ year Max.
Frequency aging
f_aging
*1
Operating temperature (-40
°C
to +85
°C),
the available frequency, symmetry and output load conditions, please refer to “Outline specifications” page.
Item
Symbol
*2
*3
PLL-PLL connection & Jitter specification, please refer to “Jitter specifications and characteristics chart” page.
PH,SH for “M” tolerance and “L” tolerance will be available up to 27 MHz. Checking possible by the Frequency checking program.
(Unit:mm)
External dimensions
5.0
±
0.2
Footprint (Recommended)
(Unit:mm)
#4
#3
3.2
±0.2
FCC21A
#1
#2
2.8
E 125.0B
Pin m ap
Pin. Connection
1
OE or
ST
2
GND
3
OUT
4
V
CC
1.6
1.2 Max.
0.1
1.0
2.54
0m in.
(0.35)
2.5
(0.35)
Note.
OE pin (P H, PC)
OE pin = "H" or "open" : Specified frequency output.
OE pin = "L" : Output is high impedanc e.
S T
pin (SH, SC)
S T
pin = "H" or "open" : Specified frequency output.
S T
pin = "L" : Output is low level (weak pull - down),oscillation stops.
2.2
2.54
M etal may be exposed on the top or bottom of this product.
This will not affect any quality, reliability or electrical spec.
To maintain stable operation, provide by-pass capacitor
with more than 0.1
µF
at a location as near as possible to
the power source terminal of the crystal products
(between V
CC
- GND).
http://www.epsontoyocom.co.jp
1.5
Crystal oscillator
Epson Toyocom
SG-8002 Series_ Outline of specifications
Item
Model
Current
Consump
tion
Supply
Voltage
4.5 V to 5.5 V
15 pF
3.0 V to 3.6 V
15 pF
(2.7 V to 3.6 V)
Output load condition
Output rise time
Output fall time
Symmetry
Function
PH
30 mA
SG-8002LB
(SOJ 4-pin)
SH
SC
Ma x.
3.0 ns Max.
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF
,
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,
L_CMOS=Max.)
2.0 ns Max.
f
0
≤80
MHz/-40 °C to+85 °C)
OE
ST
PC
28 mA
Ma x.
45 % to 55 %(50 % V
CC
, L_CMOS=15 pF V
CC
=3.0 V to 3.6 V,
,
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF V
CC
=3.0 V to 3.6 V,
,
↑
(50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤40
MHz)
OE
f
0
≤125
MHz)
f
0
≤66.7
MHz)
ST
OE
ST
SG-8002CA
(SON)
SG-8002JA
(SOJ 4-pin)
SG-8002DB
(DIP 14-pin)
SG-8002DC
(DIP 8-pin)
PT
ST
45 mA
PH
SH
PC
28 mA 3.0 V to 3.6 V
SC
PT
ST
45 mA
4.5 V to 5.5 V
Ma x.
Ma x.
25 pF (
f
0
≤66.7
MHz/-20 °C to+70 °C)
5 TTL+15 pF (
f
0
≤40
MHz/-40 °C to +85 °C)
15 pF(
f
0
≤55
MHz/-40 °C to +85 °C)
5 TTL+15 pF (
f
0
≤125
MHz/-20 °C to+70 °C)
4.5 V to 5.5 V
25 pF
50 pF
15 pF
25 pF
(
f
0
≤125
MHz/-20 °C to+70 °C)
(
f
0
≤66.7
MHz/-20 °C to+70 °C)
(
f
0
≤55
MHz/-40 °C to+85 °C)
(
f
0
≤40
MHz/-40 °C to+85 °C)
↑
(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤40.0
MHz/-40 °C to +85 °C)
(0.8 V to 2.0 V,L_CMOS or L_TTL=Max.)
40 % to 60 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤125
MHz/-20 °C to +70 °C)
4.0 ns Max.
↑
(1.4 V, L_CMOS=25 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
(0.4 V to 2.4 V,L_CMOS or L_TTL=Max.)
↑
(1.4 V, L_CMOS=15 pF,
f
0
≤55.0
MHz/-40 °C to +85 °C)
45
3.0 ns Max.
↑
(20 % V
CC
to 80 % V
CC
,L_CMOS≤25)
40
4.0 ns Max.
↑
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
↑
3.0 ns Max.
45
(20 % V
CC
to 80 % V
CC
,L_CMOS≤15)
40
4.0 ns Max.
↑
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
2.0 ns Max.
(0.8 V to 2.0 V,L_CMOS or L_TTL=Max.)
4.0 ns Max.
(0.4 V to 2.4 V,L_CMOS or L_TTL=Max.)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤25)
4.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
% to 55 %(50
(50
% to 60 %(50
(50
(50
% to 55 %(50
% to 60 %(50
(50
% V
CC
, L_CMOS=25 pF
f
0
≤66.7
MHz/-20 °C to +70 °C)
,
% V
CC
, L_MOS=25 pF,
f
0
≤40.0
MHz/-40 °C to +85 °C)
% V
CC
, L_CMOS=25 pF
f
0
≤125
MHz/-20 °C to +70 °C)
,
% V
CC
, L_CMOS=50 pF,
f
0
≤66.7
MHz/-20 °C to+70 °C)
% V
CC
, L_CMOS=15 pF,
f
0
≤55.0
MHz/-40 °C to +85 °C)
% V
CC
, L_CMOS=30 pF V
CC
=3.0 V to 3.6 V,
f
0
≤40
MHz)
,
% V
CC
, L_CMOS=15 pF V
CC
=3.0 V to 3.6 V,
f
0
≤125
MHz)
,
% V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤66.7
MHz)
45 % to 55 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
OE
ST
15 pF (
f
0
≤66.7
MHz/2.7 to 3.6 V)
15 pF (
f
0
≤125
MHz/3.0 to 3.6 V)
(2.7 V to 3.6 V)
30 pF (
f
0
≤40
MHz/3.0 to 3.6 V)
5TTL + 15 pF (
f
0
≤90
MHz/-20 to+70 °C)
15 pF (
f
0
≤125
MHz/-20 °C to +70 °C)
25 pF (
f
0
≤66.7
MHz/-20 °C to+70 °C)
15 pF (
f
0
≤125
MHz/-20 °C to+70 °C)
25 pF (
f
0
≤90
MHz/-20 °C to+70 °C)
50 pF (
f
0
≤66.7
MHz/-20 °C to+70 °C)
15 pF (
f
0
≤66.7
MHz/2.7 to 3.6 V)
OE
ST
45 % to 55 %(1.4 V,L_TTL=5 TTL+15 pF,
f
0
≤66.7
MHz/-20 °C to+70 °C)
40 % to 60 %(1.4 V,L_TTL=5 TTL+15 pF,
f
0
≤90.0
MHz/-20 °C to+70 °C)
↑
(1.4 V,L_CMOS=25 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
↑
(1.4 V,L_CMOS=15 pF,
f
0
≤125
MHz/-20 °C to +70 °C)
45 % to 55 %(50
40 % to 60 %(50
↑
(50
↑
(50
% V
CC
,
L_CMOS=25 pF
f
0
≤66.7
MHz/-20 °C to +70 °C)
,
% V
CC
, L_CMOS=15 pF
f
0
≤125
MHz/-20 °C to +70 °C)
,
% V
CC
, L_CMOS=25 pF,
f
0
≤90
MHz/-20 °C to +70 °C)
% V
CC
, L_CMOS=50 pF,
f
0
≤50
MHz/-20 °C to +70 °C)
OE
ST
SG-8002JC
(SOJ 4-pin)
PH
SH
PC
SC
PT
ST
Ma x.
OE
ST
28 mA
Ma x.
3.0 V to 3.6 V
15 pF (
f
0
≤125
MHz/3.0 to 3.6 V)
(2.7 V to 3.6 V)
30 pF (
f
0
≤40
MHz/3.0 to3.6 V)
3.0 ns Max.
45 % to 55 %(50 % V
CC
, L_CMOS=30 pF V
CC
=3.0 V to 3.6 V,
,
(20 % V
CC
to 80 % V
CC
,L_CMOS≤15)
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF V
CC
=3.0 V to 3.6 V,
,
4.0 ns Max.
↑
(50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
2.0 ns Max.
(0.8 V to 2.0 V,L_CMOS≤25)
f
0
≤40
MHz)
OE
f
0
≤125
MHz)
f
0
≤66.7
MHz)
ST
OE
ST
15 pF (
f
0
≤125
MHz/-20 °C to +70 °C )
25 pF (
f
0
≤66.7
MHz/-20 °C to+70 °C)
5TTL + 15 pF (
f
0
≤
90 MHz/-20 °C to +70 °C)
15 pF (
f
0
≤40
MHz/-40 °C to +85 °C)
SG-8002JF
(SOJ 4-pin)
45 mA
PH
Ma x.
4.5 V to 5.5 V
SH
PC
SC
PT
ST
40 mA
SG-8002CE
(SON)
Ma x.
4.5 V to 5.5 V
28 mA
Ma x.
15 pF (
f
0
≤125
MHz/-20 °C to+70 °C )
25 pF (
f
0
≤90
MHz/-20 °C to+70 °C)
50 pF (
f
0
≤50
MHz/-20 °C to+70 °C)
15 pF (
f
0
≤40
MHz/-40 °C to+85 °C)
4.0 ns Max.
↑
(1.4 V, L_CMOS=15 pF,
f
0
≤125
MHz/-20 °C to +70 °C)
(0.4 V to 2.4 V,L_CMOS or L_TTL=Max.)
↑
(1.4 V, L_CMOS=15 pF,
f
0
≤40
MHz/-40 °C to +85 °C)
45 % to 55 %(50 % V
CC
, L_CMOS=25 pF
f
0
≤66.7
MHz/-20 °C to +70 °C)
,
3.0 ns Max.
40 % to 60 %(50 % V
CC
, L_CMOS=25 pF
f
0
≤90.0
MHz/-20 °C to +70 °C)
,
(20 % V
CC
to 80 % V
CC
,L_CMOS≤25)
↑
(50 % V
CC
, L_CMOS=50 pF,
f
0
≤50.0
MHz/-20 °C to+70 °C)
4.0 ns Max.
↑
(50 % V
CC
, L_CMOS=15 pF,
f
0
≤125
MHz/-20 °C to+70 °C)
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
↑
(50 % V
CC
, L_CMOS=15 pF,
f
0
≤40
MHz/-40 °C to+85 °C)
3.0 ns Max.
(20 % V
CC
to 80 % V
CC
,L_CMOS≤15)
45 % to 55 %(50 % V
CC
, CL=30 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤40
MHz)
40 % to 60 %(50 % V
CC
, CL=15 pF, V
CC
=3.0 V to 3.6 V,
f
0
≤125
MHz)
45 % to 55 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤66.7
MHz/-20 °C to+70 °C)
40 % to 60 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤90
MHz/-20 °C to +70 °C)
↑
(1.4 V, L_CMOS=25 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
OE
ST
3.0 V to 3.6 V
15 pF(
f
0
≤125
MHz/3.0 to 3.6 V)
(2.7 V to 3.6 V)
30 pF(
f
0
≤40
MHz/3.0 to 3.6 V)
15 pF(
f
0
≤66.7
MHz/2.7 to 3.6 V)
OE
ST
5 TTL+15 pF (
f
0
≤125
MHz/-20 °C to + 70 °C)
5 TTL+15 pF (
f
0
≤27
MHz/-40 °C to +85 °C )
15 pF (
f
0
≤125
MHz/-20 °C to +70 °C )
4.0 ns Max.
↑
(50 % V
CC
, CL=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤66.7
MHz)
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
2.0 ns Max.
45 % to 55 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤66.7
MHz/-20 °C to +70 °C)
(0.8 V to 2.0 V,L_TTL=Max.)
4.0 ns Max.
(0.4 V to 2.4 V,L_TTL=Max.)
↑
(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤27.0
MHz/-40 °C to + 85 °C)
40 % to 60 %(1.4 V, L_TTL=5 TTL+15 pF,
f
0
≤125
MHz/-20 °C to +70 °C)
% V
CC
, L_CMOS=25 pF
,
OE
ST
PH
SH
PC
28 mA
SC
Ma x.
25 pF (
f
0
≤100
MHz/-20 °C to+70 °C )
25 pF (
f
0
≤27
MHz/-40 °C to +85 °C )
3.0 V to 3.6 V
15 pF (
f
0
≤66.7
MHz/2.7 to 3.6 V)
(2.7 V to 3.6 V)
15 pF (
f
0
≤125
MHz/3.0 to 3.6 V)
45 % to 55 %(50
3.0 ns Max.
↑
(50
(20 % V
CC
to 80 % V
CC
,L_CMOS=Max.)
40 % to 60 %(50
3.0 ns Max.
45 % to 55 %(50
(20 % V
CC
to 80 % V
CC
,
L_CMOS=Max.)
% V
CC
, L_CMOS=25 pF,
f
0
≤27.0
MHz/-40 °C to + 85 °C)
% V
CC
, L_CMOS=15 pF
f
0
≤125
MHz/-20 °C to +70 °C)
,
% V
CC
, L_CMOS=15 pF V
CC
=3.0 V to 3.6 V,
f
0
≤40
MHz)
,
f
0
≤66.7
MHz/-20 °C to +70 °C)
OE
ST
40 % to 60 %(50 % V
CC
, L_CMOS=15 pF V
CC
=3.0 V to 3.6 V,
,
↑
(50 % V
CC
, L_CMOS=15 pF, V
CC
=2.7 V to 3.6 V,
f
0
≤125
MHz)
f
0
≤66.7
MHz)
ST
OE
►
TABLE OF FREQUENCY RANGE
Model
PT/ ST
PH/ SH
PC/SC
PH/ SH
SG-8002LB
PC/ SC
PT/ ST
PH/ SH
PC
SC
PT/ ST
PH/ SH
PC/ SC
PT/ ST
PH/ SH
PC/ SC
3.3 V±0.3 V
4.5 V to 5.5 V
3.0 V to 3.6 V
(2.7 V to 3.6 V)
4.5 V to 5.5 V
3.0 V to 3.6 V
(2.7 V to 3.6 V)
4.5 V to 5.5 V
3.0 V to 3.6 V
(2.7 V to 3.6 V)
Supply voltage
4.5 V to 5.5 V
3.0 V to 3.6 V
(2.7 V to 3.6 V)
5.0 V±0.5 V
Frequency tolerance
OperatingTemperature
B,C
M
B,C,M
B,C
M,L
B,C,M,L
B,C
M
B,C,M
B,C
M
B,C,M
B
C
B
C
Frequency
1 MHz
1.0 MH z
1.0 MH z
1.0 MH z
*2.7
V to 3.6 V : 1.0 MHz to 66.7 MHz
1.0 MH z
1.0 MH z
1.0 MH z
1.0 MH z
1.0 MH z
1.0 MH z
*2.7
V to 3.6 V : 1.0 MHz to 66.7 MHz
1.0 MH z
1.0 MH z
1.0 MH z
1.0 MH z
1.0 MH z
*2.7
V to 3.6 V : 1.0 MHz to 66.7 MHz
55 MH z
125 MH z
*2.7
V to 3.6 V : 1.0 MHz to 66.7 MHz
125 MH z
125 MH z
125 MH z
27 MH z
125 MH z
*2.7
V to 3.6 V : 1.0 MHz to 66.7 MHz
125 MH z
40 MH z
125 MH z
80 MH z
50 MHz
27 MH z
100 MHz
125 MHz
125 MH z
125 MH z
SG-8002CE
SG-8002JF
SG-8002CA
SG-8002JA
SG-8002DB
SG-8002DC
SG-8002JC
Frequency tolerance : B:±50×10
-6
(-20 °C to +70 °C ), C:±100×10
-6
(-20 °C to +70 °C ), M:±100×10
-6
(-40 °C to +85 °C ), L:±50×10
-6
(-40 °C to +85 °C )
http://www.epsontoyocom.co.jp
Crystal oscillator
Epson Toyocom
SG / HG-8002 series_
Jitter specifications and characteristics chart
■
PLL-PLL connection
Because we use a PLL technology, there are a few cases that the jitter value will increase when SG-8002 is connected to another
PLL-oscillator.
In our experience, we are unable to recommend these products for the applications such as telecom carrier use or analog video
clock use. Please be careful checking in advance for these application (Jitter specification is Max.250 ps/CL=15 pF)
Jitter Specifications
Model
PT
/
PH
ST
/
SH
SC
/
PC
Supply
Voltage
5.0 V
±0.5
V
Peak to peak
3.3 V
±0.3
V
Cycle to cycle
Peak to peak
Jitter Item
Cycle to cycle
Specifications
150
ps Max.
200 ps Max.
200 ps Max.
250 ps Max.
200 ps Max.
250 ps Max.
Remarks
33 MHz
≤
f
0
≤
125
MHz, L_CMOS=15 pF
1.0
MHz
≤
f
0
< 33 MHz, L_CMOS=15 pF
33 MHz
≤
f
0
≤
125
MHz, L_CMOS=15 pF
1.0
MHz
≤
f
0
< 33 MHz, L_CMOS=15 pF
1.0
MHz
≤
f
0
≤
125
MHz, L_CMOS=15 pF
1.0
MHz
≤
f
0
≤
125
MHz, L_CMOS=15 pF
■
Remarks on noise management for power supply line
We do not recommend inserting filters or other devices in the power supply line as the counter measure of EMI noise reduction.
This device insertion might cause high-frequency impedance high in the power supply line and it affects oscillator stable drive.
When this measure is required, please evaluate circuitry and device behavior in the circuit and verify that it will not affect oscillation.
Start up time (0 % V
CC
to 90 % V
CC
) of power source should be more than
150
µs.
■
SG-8002 series Characteristics chart
50
40
I
CC
(mA)
30
20
10
0
50
40
I
_dis
(mA)
30
20
10
0
50
40
Symmetry (%)
I
_std
(
µ
A)
30
20
10
2.5
3.0 3.5 4.0 4.5 5.0
V
CC
(V)
5.5 6.0
20
40 60 80
100 120 140
Frequency(MHz)
Stand-by Current
20
40 60 80
100 120 140
Frequency(MHz)
Current consumption
(V
CC
=5.0V)
60
Symmetry (%)
55
50
45
40
0
60
Symmetry (%)
55
50
15
pF
50 pF
Symmetry 5.0 V CMOS Level
25 pF
3.0
Output Rise time (CMOS Level)
4.5 V
5.0 V
5.5 V
2.5
Rise time (ns)
15
pF
3.0 V
3.3 V
3.6 V
2.7 V
2.0
1.5
20
40 60 80
100 120 140
Frequency(MHz)
1.0
10 15
20 25 30 35 40 45
50 55
Disable Current
(V
CC
=5.0V)
Symmetry 3.3 V CMOS Level
3.0
30 pF
Load capacitance (pF)
Output Fall time (CMOS Level)
3.0 V
3.3 V
3.6 V
4.5 V
5.0 V
5.5 V
Fall Time (ns)
2.5
45
40
0
20
40 60 80
100 120 140
Frequency(MHz)
2.0
2.7 V
1.5
60
55
50
45
40
0
Symmetry 5.0V TTL Level
1.0
10 15
20 25 30 35 40 45
Load capacitance (pF)
50 55
25 pF
15
pF
2.0
Rise Time (ns)
1.5
1.0
Output Rise time (TTL Level)
4.5 V
5.0 V
5.5 V
20
40 60 80
100 120 140
Frequency(MHz)
10
2.0
Fall Time (ns)
Additional Value (mA)
Output load vs. Additional Current consumption
20
V
CC
=5.0 V
18
25 pF
16
14
50 pF
12
15
pF
10
30 pF
8
6
4
2
Voltage coefficient [
V
CC
vs I_dis,I_std ]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2.5
I_dis(Va)=Times(Va)×I_dis(5.0V)
I_std(Va)=Times(Va)×I_std(5.0V)
15
20
25
Load capacitance (pF)
Output Fall time (TTL Level)
30
Times
1.5
4.5 V
5.0 V
5.5 V
1.0
0
20
40 60 80
100 120 140
Frequency(MHz)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
CC
(V)
10
15
20
25
Load capacitance (pF)
30
http://www.epsontoyocom.co.jp
“QMEMS” EPSON TOYOCOM
In order to meet customer needs in a rapidly advancing digital,
broadband and ubiquitous society, we are committed to offering products
that are one step ahead of the market and a rank above the rest in quality.
To achieve our goals, we follow a “3D (three device) strategy” designed to
drive both horizontal and vertical growth. We will to grow our three device
categories of “Timing Devices”, ”Sensing Devices” and “Optical Devices”,
and expand vertical growth through a combination of products from these
categories.
A Quartz MEMS is any high added value quartz device that exploits the
characteristics of quartz crystal material but that is produced using MEMS
(micro-electro-mechanical system) processing technology.
Market needs are advancing faster than previously imagined toward
smaller, more stable crystal products, but we will stay ahead of the curve
by rolling out products that exceed market speed and quality
requirements. We want to further accelerate the 3D strategy by QMEMS.
Quartz devices have become crucial in the network environment where
products are increasingly intended for broadband, ubiquitous applications
and where various types of terminals can transfer information almost
immediately via LAN and WAN on a global scale. Epson Toyocom
Corporation addresses every single aspect within a network environment.
The new corporation offers “Digital Convergence” solutions to problems
arising with products for consumer use, such as, core network systems
and automotive systems.
PROMOTION OF ENVIRONMENTAL MANAGEMENT SYSTEM
CONFORMING TO INTERNATIONAL STANDARDS
At Epson Toyocom, all environmental initiatives operate under
ISO 14000 is an international standard for environmental management
the Plan-Do-Check-Action(PDCA) cycle designed to achieve
that was established by the International Standards Organization in 1996
continuous improvements. The environmental management
against the background of growing concern regarding global warming,
system (EMS) operates under the ISO 14001 environmental
destruction of the ozone layer and global deforestation
management standard.
All of our major manufacturing and non-manufacturing sites,in Japan and overseas, completed the acquisition of ISO 14001 certification.
WORKING FOR HIGH QUALITY
In order provide high quality and reliable products and services than meet customer needs,
Epson Toyocom made early efforts towards obtaining ISO9000 series certification and has acquired ISO9001 for all business establishments in Japan
and abroad. We have also acquired ISO/TS 16949 certification that is requested strongly by major automotive manufacturers as standard.
QS-9000 is an enhanced standard for quality assurance systems
formulated by leading U.S. automobile manufacturers based on the
international ISO 9000 series.
ISO/TS 16949 is a global standard based on QS-9000, a severe standard
corresponding to the requirements from the automobile industry.
►Explanation
of the mark that are using it for the catalog
►Pb
free.
►Complies
with EU RoHS directive.
*About the products without the Pb-free mark.
Contains Pb in products exempted by EU RoHS directive.
(Contains Pb in sealing glass, high melting temperature type solder or other.)
►The
products have been designed for high reliability applications such as Automotive.
Notice
●This
material is subject to change without notice.
●Any
part of this material may not be reproduced or duplicated in any form or any means without the written permission of Epson Toyocom.
●The
information, applied circuitry, programming, usage, etc., written in this material is intended for reference only. Epson Toyocom does not
assume any liability for the occurrence of infringing on any patent or copyright of a third party. This material does not authorize the licensing for
any patent or intellectual copyrights.
●Any
product described in this material may contain technology or the subject relating to strategic products under the control of the Foreign
Exchange and Foreign Trade Law of Japan and may require an export license from the Ministry of International Trade and Industry or other
approval from another government agency.
●You
are requested not to use the products (and any technical information furnished, if any) for the development and/or manufacture of weapon
of mass destruction or for other military purposes. You are also requested that you would not make the products available to any third party
who may use the products for such prohibited purposes.
●These
products are intended for general use in electronic equipment. When using them in specific applications that require extremely high
reliability, such as the applications stated below, you must obtain permission from Epson Toyocom in advance.
/ Space equipment (artificial satellites, rockets, etc.) / Transportation vehicles and related (automobiles, aircraft, trains, vessels, etc.)
/ Medical instruments to sustain life / Submarine transmitters / Power stations and related / Fire work equipment and security equipment
/ traffic control equipment / and others requiring equivalent reliability.
●
In this new crystal master for Epson Toyocom, product codes and markings will remain as previously identified prior to the merger.
Due to the on-going strategy of gradual unification of part numbers, please review product codes and markings, as they will change during the
course of the coming months.
We apologize for the inconvenience, but we will eventually have a unified part numbering system for Epson Toyocom that will be user friendly.
京公网安备 11010802033920号
EEWORLD
