LP1022H datasheet, PDF - EEWORLD Datasheet

LP1022H: DescriptionVariable Capacitance Diode, Ultra High Frequency, 8.2pF C(T), 25V, Silicon, Abrupt,; CategoryDiscrete semiconductor diode; File Size62KB，1 Pages; ManufacturerAPI Technologies; Websitehttp://www.apitech.com/about-api

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LP1022H Overview

Variable Capacitance Diode, Ultra High Frequency, 8.2pF C(T), 25V, Silicon, Abrupt,

Parameter Name	Attribute value
Maker	API Technologies
package instruction	O-CUPM-N1
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW INDUCTANCE
Minimum breakdown voltage	25 V
Shell connection	CATHODE
Configuration	SINGLE
Diode Capacitance Tolerance	9.76%
Minimum diode capacitance ratio	4.5
Nominal diode capacitance	8.2 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	ULTRA HIGH FREQUENCY
JESD-30 code	O-CUPM-N1
Number of components	1
Number of terminals	1
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	POST/STUD MOUNT
Maximum power dissipation	5 W
Certification status	Not Qualified
minimum quality factor	800
Maximum repetitive peak reverse voltage	25 V
Maximum reverse current	0.02 µA
Reverse test voltage	20 V
surface mount	NO
Terminal form	NO LEAD
Terminal location	UPPER
Varactor Diode Classification	ABRUPT

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