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GS81302R08GE-167T

Description
DDR SRAM, 4MX8, 0.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-165
Categorystorage    storage   
File Size561KB,36 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance  
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GS81302R08GE-167T Overview

DDR SRAM, 4MX8, 0.5ns, CMOS, PBGA165, 15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-165

GS81302R08GE-167T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGSI Technology
Parts packaging codeBGA
package instruction15 X 13 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-165
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Maximum access time0.5 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length17 mm
memory density33554432 bit
Memory IC TypeDDR SRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX8
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.5 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width15 mm
Preliminary
GS81302R08/09/18/36E-333/300/250/200/167
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaDDR™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36 and x18) and Nybble Write (x8) function
• Burst of 4 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb
devices
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
144Mb SigmaDDR
TM
-II
Burst of 4 SRAM
333 MHz–167 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
Bottom View
165-Bump, 15 mm x 17 mm BGA
1 mm Bump Pitch, 11 x 15 Bump Array
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Common I/O x36 and x18 SigmaDDR-II B4 RAMs always
transfer data in four packets. When a new address is loaded, A0
and A1 preset an internal 2 bit linear address counter. The
counter increments by 1 for each beat of a burst of four data
transfer. The counter always wraps to 00 after reaching 11, no
matter where it starts.
Common I/O x8 and x9 SigmaDDR-II B4 RAMs always
transfer data in four packets. When a new address is loaded,
the LSBs are internally set to 0 for the first read or write
transfer, and incremented by 1 for the next 3 transfers.
Because the LSBs are tied off internally, the address field of a
x8/x9 SigmaDDR-II B4 RAM is always two address pins less
than the advertised index depth (e.g., the 16M x 9 has a 4M
addressable index).
SigmaDDR™ Family Overview
The GS81302R08/09/18/36E are built in compliance with the
SigmaDDR-II SRAM pinout standard for Common I/O
synchronous SRAMs. They are 150,994,944-bit (144Mb)
SRAMs. The GS81302R08/09/18/36E SigmaDDR-II SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS81302R08/09/18/36E SigmaDDR-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
Parameter Synopsis
-333
tKHKH
tKHQV
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
-200
5.0 ns
0.45 ns
-167
6.0 ns
0.5 ns
Rev: 1.01a 6/2010
1/36
© 2007, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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