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Datasheet> All Categories > Discrete semiconductor> diode> B80C800
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B80C800

Description
Bridge Rectifier Diode, 1 Phase, 0.8A, 200V V(RRM), Silicon, PLASTIC, WOB, 4 PIN
CategoryDiscrete semiconductor    diode   
File Size143KB，3 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Download Datasheet Parametric Compare View All

B80C800 Overview

Bridge Rectifier Diode, 1 Phase, 0.8A, 200V V(RRM), Silicon, PLASTIC, WOB, 4 PIN

B80C800 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionO-PBCY-W4
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY, UL RECOGNIZED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeO-PBCY-W4
Humidity sensitivity level1
Maximum non-repetitive peak forward current45 A
Number of components4
Phase1
Number of terminals4
Maximum output current0.8 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED

B80C800 Preview




                                 




  

                               

 

 

 

 
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In mm
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•
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•

                                     

  

                               

 

 

 
,
 

 A

Single phase half-sine-wave
60Hz resistive or inductive load

1.0
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
1.5
10
I
F
, AVERAGE FORWARD CURRENT (A)
1.0



0.5
0.1
T
j
= 25°C
Pulse width = 300µs
0
0
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
Pulse Width 8.3 ms
Single Half-Sine-Wave
(JEDEC Method)
0.01
0.2
0.6
1.0
1.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, per element
150
50
100
T
j
= 25°C
f = 1mz
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
30
C
j
, JUNCTION CAPACITANCE (pF)
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
100



40

10
20
10
0
1
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
•
221 West Industry Court
!
Deer Park, NY 11729-4681
!
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web Site - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
•
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
•
•
World Wide Web - http://www.sensitron.com
•
E-Mail Address - sales@sensitron.com
•
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

B80C800 Related Products

B80C800 B500C800 B250C800 B380C800 B125C800 B40C800
Description Bridge Rectifier Diode, 1 Phase, 0.8A, 200V V(RRM), Silicon, PLASTIC, WOB, 4 PIN Bridge Rectifier Diode, 1 Phase, 0.8A, 1200V V(RRM), Silicon, PLASTIC, WOB, 4 PIN Bridge Rectifier Diode, 1 Phase, 0.8A, 600V V(RRM), Silicon, PLASTIC, WOB, 4 PIN Bridge Rectifier Diode, 1 Phase, 0.8A, 900V V(RRM), Silicon, PLASTIC, WOB, 4 PIN Bridge Rectifier Diode, 1 Phase, 0.8A, 300V V(RRM), Silicon, PLASTIC, WOB, 4 PIN Bridge Rectifier Diode, 1 Phase, 0.8A, 100V V(RRM), Silicon, PLASTIC, WOB, 4 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible
Maker Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd. Sangdest Microelectronics (Nanjing) Co., Ltd.
package instruction O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4
Reach Compliance Code compliant compliant compliant compli compli compli
Other features HIGH RELIABILITY, UL RECOGNIZED HIGH RELIABILITY, UL RECOGNIZED HIGH RELIABILITY, UL RECOGNIZED HIGH RELIABILITY, UL RECOGNIZED HIGH RELIABILITY, UL RECOGNIZED HIGH RELIABILITY, UL RECOGNIZED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4 O-PBCY-W4
Humidity sensitivity level 1 1 1 1 1 1
Maximum non-repetitive peak forward current 45 A 45 A 45 A 45 A 45 A 45 A
Number of components 4 4 4 4 4 4
Phase 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4
Maximum output current 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 200 V 1200 V 600 V 900 V 300 V 100 V
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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