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2N6217

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size117KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2N6217 Overview

Transistor

2N6217 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6216 2N6217
DESCRIPTION
・With
TO-3 package
・High
current ,high power dissipation
APPLICATIONS
・For
use in switching and linear
power applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
固电
导½
PARAMETER
2N6216
CONDITIONS
Collector-base voltage
2N6217
Open emitter
V
CEO
Collector-emitter voltage
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
HA
INC
GS
N
2N6216
2N6217
Open base
MIC
E
UC
ND
O
VALUE
200
TOR
180
150
140
7
10
UNIT
V
V
Open collector
V
A
W
Total power dissipation
Junction temperature
Storage temperature
T
C
=100℃
71
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.46
UNIT
℃/W

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2N6217 2N6216
Description Transistor Transistor
Reach Compliance Code unknow unknow
Base Number Matches 1 1
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