Preliminary
Datasheet
CR6CM-12B
600V - 6A - Thyristor
Medium Power Use
Features
•
I
T (AV)
: 6 A
•
V
DRM
: 600 V
•
I
GT
: 10 mA
•
Non-Insulated Type
•
Planar Passivation Type
R07DS0230EJ0300
Rev.3.00
Jul 30, 2013
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
RENESAS Package code: PRSS0004AA-A
A
(Package name: TO-220)
4
2, 4
3
1
1.
2.
3.
4.
Cathode
Anode
Gate
Anode
1
2
3
12
3
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
Page 1 of 8
CR6CM-12B
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2
t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
Tj
Tstg
—
Ratings
9.4
6
90
41
5
0.5
6
10
2
– 40 to +150
– 40 to +150
2.1
Unit
A
A
A
A
2
s
W
W
V
V
A
°C
°C
g
Conditions
Preliminary
Commercial frequency, sine half wave
Note1
180° conduction, Tc = 121°C
50Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 50Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-c)
Min.
—
—
—
—
0.2/0.1
—
—
—
Typ.
—
—
—
—
—
—
15
—
Max.
2.0/5.0
2.0/5.0
1.7
1.0
—
10
—
2.5
Unit
mA
mA
V
V
V
mA
mA
°C/W
Test conditions
Tj = 125°C/150°C, V
RRM
applied
Tj = 125°C/150°C, V
DRM
applied
Tc = 25°C, I
TM
= 20 A,
instantaneous value
Tj = 25°C, V
D
= 6 V, I
T
= 1 A
Tj = 125°C/150°C, V
D
= 1/2
V
DRM
Tj = 25°C, V
D
= 6 V, I
T
= 1 A
Tj = 25°C, V
D
= 12 V
Junction to case
Note1 Note2
Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case.
2. The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
Page 2 of 8
CR6CM-12B
Preliminary
Performance Curves
Maximum On-State Characteristics
10
3
Tc = 125°C
100
Rated Surge On-State Current
Surge On-State Current (A)
1
2
3
4
5
On-State Current (A)
80
10
2
60
40
10
1
20
0
10
0
10
0
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 50Hz)
10
2
×
100 (%)
Gate Characteristics
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
10
1
V
FGM
= 6V
P
GM
= 5W
P
G(AV)
= 0.5W
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
10
2
V
GT
= 1V
10
0
I
GT
= 10mA
V
GD
= 0.1V
10
-1
10
1
10
2
10
1
I
FGM
= 2A
10
3
10
0
–
40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
Transient Thermal Impedance (°C/W)
10
3
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
10
2
10
1
10
2
10
0
10
1
–
40
0
40
80
120
160
10
–1 –3
10
10
–2
10
–1
10
0
10
1
Junction Temperature (°C)
Time (s)
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
Page 3 of 8
CR6CM-12B
Preliminary
Allowable Case
Temperature
vs.
Average On-State Current
(Single-Phase
Half
Wave)
160
Maximum Average Power Dissipation
(Single-Phase
Half
Wave)
16
Average Power Dissipation (W)
12
10
8
6
4
2
0
0
2
4
6
θ
=
30°
180°
Case
Temperature
(°C)
14
140
120
100
80
60
40
20
0
0
180°
120°
90°
60°
θ
=
30°
2
4
6
8
θ
360°
Resistive,
inductive loads
120°
90°
60°
θ
360°
Resistive,
inductive loads
8
10
12
10
12
Average On-State Current (A)
Average On-State Current (A)
Allowable Case
Temperature
vs.
Average On-State Current
(Single-Phase
Full
Wave)
160
140
Maximum Average Power Dissipation
(Single-Phase
Full
Wave)
16
Average Power Dissipation (W)
12
10
8
6
4
2
0
0
2
θ
=
30°
180°
120°
Case
Temperature
(°C)
14
θ
θ
120
100
80
60
40
20
θ
=
30°
2
4
60°
6
8
360°
Resistive
loads
90°
60°
θ
θ
180°
120°
90°
360°
Resistive
loads
4
6
8
10
12
0
0
10
12
Average On-State Current (A)
Average On-State Current (A)
Allowable Case
Temperature
vs.
Average On-State Current
(Rectangular Wave)
160
140
Maximum Average Power Dissipation
(Rectangular Wave)
16
Average Power Dissipation (W)
14
12
10
8
6
4
2
0
0
2
4
6
θ
360°
Resistive,
inductive loads
8
10
12
θ
=
30°
Case
Temperature
(°C)
90°
60°
DC
270°
180°
120°
120
100
80
60
40
20
0
0
180° 270°
60°
DC
90°
120°
θ
=
30°
2
4
6
8
10
12
Resistive,
inductive loads
θ
360°
Average On-State Current (A)
Average On-State Current (A)
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
Page 4 of 8
CR6CM-12B
Repetitive Peak Reverse Voltage (Tj
=
t°C)
Repetitive Peak Reverse Voltage (Tj
=
25°C)
×
100 (%)
Preliminary
Breakover Voltage vs.
Junction
Temperature
Repetitive Peak Reverse Voltage vs.
Junction
Temperature
160
140
120
100
80
60
40
20
0
–40
×
100 (%)
160
140
120
100
80
60
40
20
Typical Example
Typical Example
Breakover Voltage (Tj
=
25°C)
Breakover Voltage (Tj
=
t°C)
0
–40
0
40
80
120
160
0
40
80
120
160
Junction
Temperature
(°C)
Junction
Temperature
(°C)
×
100 (%)
Breakover Voltage (dv/dt
=
1V/μs)
160
140
120
100
80
60
40
20
×
100 (%)
Breakover Voltage (dv/dt
=
1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Typical Example
Tj =
125°C
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
0
1
10
10
2
10
3
10
4
Typical Example
Tj =
150°C
Breakover Voltage (dv/dt
=
vV/μs)
0
1
10
10
2
10
3
10
4
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt
=
vV/μs)
Rate of Rise of Off-State Voltage (V/μs)
Holding
Current vs.
Junction
Temperature
Turn-Off Time
vs.
Junction
Temperature
80
70
×
100 (%)
10
3
Typical Example
Typical Example
Turn-Off Time
(μs)
Holding
Current (Tj
=
t°C)
Holding
Current (Tj
=
25°C)
60
50
40
30
10
2
Distribution
20
10
10
1
–40
0
40
80
120
160
0
I
T
=
6A,
–di/dt =
5A/μs,
V
D
=
300V, dv/dt
=
20V/μs
V
R
=
50V
0
20
40
60
80 100 120 140 160
Junction
Temperature
(°C)
Junction
Temperature
(°C)
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
Page 5 of 8
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