Preliminary
Datasheet
CR8FM-12B
600V-8A-Thyristor
Medium Power Use
Features
•
•
•
•
I
T (AV)
: 8 A
V
DRM
: 600 V
I
GT
: 15 mA
Viso : 2000 V
•
Insulated Type
•
Planar Passivation Type
R07DS1099EJ0100
Rev.1.00
Aug 02, 2013
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. Cathode
2. Anode
3. Gate
1
1
2 3
3
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Symbol
V
RRM
V
RSM
V
R(DC)
V
DRM
V
D(DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
R07DS1099EJ0100 Rev.1.00
Aug 02, 2013
Page 1 of 7
CR8FM-12B
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Isolation voltage
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2
t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
Tj
Tstg
—
Viso
Ratings
12.6
8
120
60
5
0.5
6
10
2
– 40 to +150
– 40 to +150
1.9
2000
Unit
A
A
A
A
2
s
W
W
V
V
A
°C
°C
g
V
Conditions
Preliminary
Commercial frequency, sine half wave
180° conduction, Tc = 106°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
each terminal to case
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th(j-c)
Min.
—
—
—
—
—
—
0.2
0.1
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
15
—
Max.
2.0
5.0
2.0
5.0
1.4
1.0
—
—
15
—
3.7
Unit
mA
mA
mA
mA
V
V
V
V
mA
mA
°C/W
Test conditions
Tj = 125°C, V
RRM
applied
Tj = 150°C, V
RRM
applied
Tj = 125°C, V
DRM
applied
Tj = 150°C, V
DRM
applied
Tc = 25°C, I
TM
= 25 A,
instantaneous value
Tj = 25°C, V
D
= 6 V, I
T
= 1 A
Tj = 125°C, V
D
= 1/2 V
DRM
Tj = 150°C, V
D
= 1/2 V
DRM
Tj = 25°C, V
D
= 6 V, I
T
= 1 A
Tj = 25°C, V
D
= 12 V
Junction to case
Note1
Notes: 1. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
R07DS1099EJ0100 Rev.1.00
Aug 02, 2013
Page 2 of 7
CR8FM-12B
Preliminary
Performance Curves
Maximum On-State Characteristics
10
3
Tc = 125°C
200
Rated Surge On-State Current
Surge On-State Current (A)
1
2
3
4
5
On-State Current (A)
160
10
2
120
80
10
1
40
0
10
0
10
0
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 50Hz)
10
2
×
100 (%)
Gate Characteristics
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
10
1
V
FGM
= 6V
P
GM
= 5W
Gate Trigger Current (Tj = 25°C)
Gate Trigger Current (Tj = t°C)
Gate Voltage (V)
10
2
V
GT
= 1V
P
G(AV)
= 0.5W
10
0
I
GT
= 15mA
10
1
10
-1
V
GD
= 0.2V
I
FGM
= 2A
10
1
10
2
10
3
10
0
–
40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
×
100 (%)
Gate Trigger Voltage vs.
Junction Temperature
Transient Thermal Impedance (°C/W)
10
3
Typical Example
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
10
2
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage (Tj = t°C)
10
1
10
2
10
0
10
1
–
40
0
40
80
120
160
10
–1 –3
10
10
–2
10
–1
10
0
10
1
Junction Temperature (°C)
Time (s)
R07DS1099EJ0100 Rev.1.00
Aug 02, 2013
Page 3 of 7
CR8FM-12B
Preliminary
Allowable Case
Temperature
vs.
Average On-State Current
(Single-Phase
Half
Wave)
160
140
Maximum Average Power Dissipation
(Single-Phase
Half
Wave)
20
Average Power Dissipation (W)
16
180°
Case
Temperature
(°C)
θ
360°
Resistive,
inductive loads
180°
120°
90°
60°
θ
=
30°
2
4
6
8
10
12
14
16
120
100
80
60
40
20
0
0
12
θ
=
30°
120°
90°
60°
8
θ
4
360°
Resistive,
inductive loads
0
2
4
6
8
10
12
14
16
0
Average On-State Current (A)
Average On-State Current (A)
Allowable Case
Temperature
vs.
Average On-State Current
(Single-Phase
Full
Wave)
160
Resistive
loads
Maximum Average Power Dissipation
(Single-Phase
Full
Wave)
20
Average Power Dissipation (W)
16
180°
Case
Temperature
(°C)
140
120
100
80
60
40
20
60°
θ
=
30°
2
4
6
θ
θ
360°
12
θ
=
30°
120°
90°
60°
8
4
θ
θ
180°
120°
90°
360°
Resistive
loads
0
0
2
4
6
8
10
12
14
16
0
0
8
10
12
14
16
Average On-State Current (A)
Average On-State Current (A)
Allowable Case
Temperature
vs.
Average On-State Current
(Rectangular Wave)
160
Resistive,
inductive loads
Maximum Average Power Dissipation
(Rectangular Wave)
20
Average Power Dissipation (W)
180°
16
60°
12
θ
=
30°
90°
120°
140
Case
Temperature
(°C)
θ
360°
DC
270°
120
100
80
60
40
20
8
θ
4
360°
Resistive,
inductive loads
0
0
2
4
6
8
10
12
14
16
0
0
180° 270°
60°
DC
θ
=
30°
90°
120°
2
4
6
8
10
12
14
16
Average On-State Current (A)
Average On-State Current (A)
R07DS1099EJ0100 Rev.1.00
Aug 02, 2013
Page 4 of 7
CR8FM-12B
Breakover
Voltage vs.
Junction
Temperature
160
140
120
100
80
60
40
20
0
–40
Preliminary
Repetitive Peak Reverse Voltage (Tj
=
t°C)
×
100 (%)
Repetitive Peak Reverse Voltage (Tj
=
25°C)
Repetitive Peak Reverse Voltage vs.
Junction
Temperature
160
140
120
100
80
60
40
20
0
–40
Breakover
Voltage (Tj
=
t°C)
×
100 (%)
Breakover
Voltage (Tj
=
25°C)
Typical Example
Typical Example
0
40
80
120
160
0
40
80
120
160
Junction
Temperature
(°C)
Junction
Temperature
(°C)
Breakover
Voltage (dv/dt
=
vV/μs)
×
100 (%)
Breakover
Voltage (dv/dt
=
1V/μs)
160
140
120
100
80
60
40
20
Breakover
Voltage (dv/dt
=
vV/μs)
×
100 (%)
Breakover
Voltage (dv/dt
=
1V/μs)
Breakover
Voltage vs.
Rate of Rise of Off-State Voltage
Typical Example
Tj =
125°C
Breakover
Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
0
1
10
10
2
10
3
10
4
Typical Example
Tj =
150°C
0
10
1
10
2
10
3
10
4
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Holding
Current vs.
Junction
Temperature
Turn-Off Time
vs.
Junction
Temperature
100
Holding
Current (Tj
=
t°C)
×
100 (%)
Holding
Current (Tj
=
25°C)
10
3
Typical Example
Turn-Off Time
(μs)
80
I
T
=
8A,
–di/dt =
5A/µs,
V
D
=
300V, dv/dt
=
20V/µs
V
R
=
50V
60
10
2
40
20
1
Typical Example
Distribution
10
–40
0
40
80
120
160
0
0
20
40
60
80 100 120 140 160
Junction
Temperature
(°C)
Junction
Temperature
(°C)
R07DS1099EJ0100 Rev.1.00
Aug 02, 2013
Page 5 of 7
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