OSI Optoelectronics High Speed Silicon series are small area devices
optimized for fast response time or High bandwith applications. The
BPX-65 complements the rest of the high speed group with an industry
standard.
The spectral range for these devices goes from 50 nm to 1100 nm. The
responsivity and response time are optimized such that the HR series
exhibit a peak responsivity of 0.50 A/W at 800 nm and typical response
times of a few hundred pico seconds at -5V.
Note that for all high-speed photodetectors, a reverse bias is required
to achieve the fastest response times. However, the reverse bias should
be limited to maximum reverse voltage specified to avoid damage to the
detector. Output signals can be measured directly with an oscilloscope
or coupled to high frequency amplifiers as shown in figure 10 of the
Photodiode Characteristics section of the catalog. All parts in the High-
Speed silicon series are available with a flat window or ball lens (L).
n
APPLICATIONS
n
FEATURES
• Video Systems
• Computers and Peripherals
• Industrial Control
• Guidance Systems
• Laser Monitoring
• Low Dark Current
• Low Capacitance
• TO-46 Package
• w/Lensed Cap
• Sub ns Response
0
High Speed Silicon Series
Typical Electro-Optical Specifications at T
A
=23ºC
Rise
Time §
(ns) ‡
830 nm
50 Ω
Temp.**
Range
(˚C)
Package
Style ¶
Peak Wavelength
(nm)
Model Number
Active Area
Responsivity
(A/W)
Capacitance
(pF) ‡
830
nm
Dark Current
(nA) ‡
NEP
(W/
½
Hz)
Area (mm
2
)
Dimensions
(mm)
Reverse
Voltage
(V)
min.
typ.
typ.
typ.
max.
typ.
max.
typ.
High Responsivity Series (V
BIAS
=-5 V)
PIN-HR005
PIN-HR005L*
PIN-HR008
PIN-HR008L*
PIN-HR020
PIN-HR020L*
PIN-HR026
PIN-HR026L*
PIN-HR040
PIN-HR040L*
0.01
0.04
0.02
0.34
0.77
0.127
φ
0.203 sq
0.508
φ
0.660
φ
0.991
φ
800
0.45*
0.50*
0.8
0.8
1.8
2.6
4.9
0.03
0.03
0.06
0.1
0.3
0.8
0.8
1.0
1.5
2.0
5.0 e-15
5.0 e-15
7.1 e-15
1.0 e-14
1.9 e-14
15
0.60
0.60
0.80
0.90
1.0
9 / TO-18
16 / TO-18
(L - Ball
Lens Cap)
BPX-65 (V
BIAS
=-20 V)
BPX-65
1.0
1.0 sq
900
0.45
0.5
3.0
0.5
5.0
2.3 e-14
50
2.0
7 / TO-18
Peak Wavelength
(nm)
Model Number
Active Area
Responsivity
(A/W)
Capacitance
(pF) ‡
900
nm
Dark Current
(nA) ‡
NEP
(W/
½
Hz)
Area (mm
2
)
Dimensions
(mm)
Reverse
Voltage
(V)
Rise
Time §
(ns) ‡
Temp.**
Range
(˚C)
Package
Style ¶
min.
typ.
typ.
typ.
max.
typ.
max.
typ.
BPX-65R (V
BIAS
=-20 V)
-40 ~
+80
BPX-65R
1.0
1.0 sq
850
0.52
0.55
3.5
1.0
5.0
3.3 e-14
30
3.5
-55 ~
+100
4 / TO-18
¶ For mechanical drawing, please refer to pages 58 thru 69.
* Responsivities are measured for Flat window devices. L- Refers to devices with a Ball-type lens cap.
Chip centering is within +/- 0.005” wrt OD of the Header.
** Non-Condensing temperature and Storage Range, Non-Condensing Environment.
Cathode on BPX-65R is connected to the case.
Storage
900 nm
820 nm
Operating
-40 ~ +100
-25 ~ +85
Storage
830 nm
Operating
1
Photodiode Care and Handling Instructions
AVOID DIRECT LIGHT
Since the spectral response of silicon photodiode includes the visible light region, care must be taken to avoid photodiode exposure to high ambient
light levels, particularly from tungsten sources or sunlight. During shipment from OSI Optoelectronics, your photodiodes are packaged in opaque, padded
containers to avoid ambient light exposure and damage due to shock from dropping or jarring.
AVOID SHARP PHYSICAL SHOCK
Photodiodes can be rendered inoperable if dropped or sharply jarred. The wire bonds are delicate and can become separated from the photodiode’s
bonding pads when the detector is dropped or otherwise receives a sharp physical blow.
CLEAN WINDOWS WITH OPTICAL GRADE CLOTH / TISSUE
Most windows on OSI Optoelectronics photodiodes are either silicon or quartz. They should be cleaned with isopropyl alcohol and a soft (optical grade)
pad.
OBSERVE STORAGE TEMPERATURES AND HUMIDITY LEVELS
Photodiode exposure to extreme high or low storage temperatures can affect the subsequent performance of a silicon photodiode. Storage temperature
guidelines are presented in the photodiode performance specifications of this catalog. Please maintain a non-condensing environment for optimum
performance and lifetime.
OBSERVE ELECTROSTATIC DISCHARGE (ESD) PRECAUTIONS
OSI Optoelectronics photodiodes, especially with IC devices (e.g. Photops) are considered ESD sensitive. The photodiodes are shipped in ESD protective
packaging. When unpacking and using these products, anti-ESD precautions should be observed.
DO NOT EXPOSE PHOTODIODES TO HARSH CHEMICALS
Photodiode packages and/or operation may be impaired if exposed to CHLOROTHENE, THINNER, ACETONE, or TRICHLOROETHYLENE.
INSTALL WITH CARE
Most photodiodes in this catalog are provided with wire or pin leads for installation in circuit boards or sockets. Observe the soldering temperatures and
conditions specified below:
Soldering Iron:
Soldering 0 W or less
Temperature at tip of iron 00°C or lower.
Bath Temperature:
Immersion Time:
Soldering Time:
DO NOT USE
DO NOT USE
60±5°C.
within 5 Sec.
within Sec.
Dip Soldering:
Vapor Phase Soldering:
Reflow Soldering:
Photodiodes in plastic packages should be given special care. Clear plastic packages are more sensitive to environmental stress than those of black
plastic. Storing devices in high humidity can present problems when soldering. Since the rapid heating during soldering stresses the wire bonds and can
cause wire to bonding pad separation, it is recommended that devices in plastic packages to be baked for 4 hours at 85°C.
The leads on the photodiode
SHOULD NOT BE FORMED.
If your application requires lead spacing modification, please contact OSI Optoelectronics
Applications group at (10)978-0516 before forming a product’s leads. Product warranties could be voided.
56
1. Parameter Definitions:
A
a
B
c
=
=
=
=
Distance from top of chip to top of glass.
Photodiode Anode.
Distance from top of glass to bottom of case.
Photodiode Cathode
(Note: cathode is common to case in metal package products unless otherwise noted).
W = Window Diameter.
F.O.V. = Filed of View (see definition below).
2. Dimensions are in inches (1 inch = 25.4 mm).
3. Pin diameters are 0.018 ± 0.002" unless otherwise specified.
4. Tolerances
(unless otherwise noted)
General: 0.XX ±0.01"
0.XXX ±0.005"
Chip Centering: ±0.010"
Dimension ‘A’: ±0.015"
5. Windows
All
‘UV’
Enhanced products are provided with QUARTZ glass windows,
0.07 ± 0.00" thick.
All
‘XUV’
products are provided with removable windows.
All
‘DLS’
PSD products are provided with A/R coated glass windows.
All
‘FIL’
photoconductive and photovoltaic products are epoxy filled instead of
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