SM 465IS
MK04 S
Advanced N-Ch Power MOSFE
ET
SWIT
TCHING REG
G
GULATO APP
OR
PLICAT
TION
Fe
eatures
•
Drain-sour breakdo
rce
own voltage: BV
DSS
=650V
•
Low gate c
charge: Q
g
=
=11.2nC (Ty
yp.)
•
Low drain-source On-
-resistance: R
DS(on)
=3Ω (Max.)
•
RoHS com
mpliant devic
ce
•
Halogen fre package
ee
e
Or
rdering In
nformatio
on
Part Num
mber
SMK046
65IS
Marking
g
SMK046
65
Package
I-PAK
(Short lead
(
d)
GDS
I-PAK (Short Lead)
K
L
n
Marking Information
SM
MK
046
65
YW
WW
Column 1, 2: Device Co
ode
Column 3: Production In
nformation
e.g.) YWW
W
-. YWW: Date Code (y
year, week)
bsolute m
maximum ratings
(
C
=25°C unle otherwise noted)
m
(T
ess
e
Ab
Characte
eristic
Drain-source voltage
D
Gate-source v
G
voltage
Drain current (DC)
*
D
Drain current (Pulsed)
*
D
(Note 2)
Single avalanche current
(
S
)
Single pulsed avalanche e
S
energy
(Note 2)
Symbol
V
DS
SS
V
GS
SS
I
D
T
c
=25°C
T
c
=100°C
I
DM
M
I
AR
R
E
AS
I
AR
R
E
AR
P
D
T
J
T
sttg
Rating
65
50
±3
30
4
2.5
16
6
4
81.5
4
3.4
48
8
15
50
-55~
~150
Unit
V
V
A
A
A
A
mJ
A
mJ
W
°C
°C
Repetitive ava
R
alanche curre
(Note 1)
ent
Repetitive ava
R
alanche ener
(Note 1)
rgy
Power dissipa
P
ation
Ju
unction temp
perature
Storage temperature rang
S
ge
*L
Limited only m
maximum junc
ction temperatu
ure
v.
JUL-12
Rev date: 16-J
KS
SD-T6Q016-0
000
www.auk.co
o.kr
1o 8
of
SMK0465IS
Thermal Characteristics
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
R
th(j-c)
R
th(j-a)
Rating
Max. 2.6
Max. 62.5
Unit
°C/W
Electrical Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
(Note 3)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
(Note 3,4)
Rise time
(Note 3,4)
Turn-off delay time
Fall time
(Note 3,4)
Total gate charge
(Note 4,5)
Gate-source charge
(Note 3,4)
Gate-drain charge
(Note 3,4)
(Note 3,4)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250uA, V
GS
=0
I
D
=250uA, V
DS
=V
GS
V
DS
=650V, V
GS
=0V
V
DS
=650V, T
c
=125
°C
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=2A
V
DS
=10V, I
D
=2A
V
DS
=25V, V
GS
=0V,
f=1.0MHz
Min.
650
2
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
2.4
4
703
54.6
5.6
10
42
38
46
11.2
3.9
2.5
Max.
-
4
1
100
±100
3
-
878
68.2
7.0
-
-
-
-
14
-
-
Unit
V
V
uA
uA
nA
Ω
S
pF
V
DD
=300V, I
D
=4A
R
G
=25Ω
-
-
-
-
ns
V
DS
=520V, V
GS
=10V
I
D
=4A
-
-
nC
Source-Drain Diode Ratings and Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
(Note 3, 4)
Reverse recovery charge
(Note 4,5)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=4A
I
S
=4A, V
GS
=0V
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ.
-
-
-
300
2.2
Max.
4
16
1.4
-
-
Unit
A
A
V
ns
uC
Note:
1. Repeated rating: Pulse width limited by safe operating area
2. L=9.4mH, I
AS
=4A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
3. Pulse test: Pulse width≤300us, Duty cycle≤2%
4. Essentially independent of operating temperature typical characteristics
Rev. date: 16-JUL-12
KSD-T6Q016-000
www.auk.co.kr
2 of 8
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