Direct Attach DA700™ LEDs
CxxxDA700-Sxx000
Data Sheet
Cree’s Direct Attach DA700 LEDs are the next generation of solid-state LED emitters that combine highly efficient
InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
the TV-backlighting and general-illumination markets. The DA700 LEDs are among the brightest in the lighting market
while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpad-down
design allows for eutectic die attach, eliminating the need for wire bonds, and enables superior performance from
improved thermal management.
FEATURES
•
•
•
•
•
•
•
Direct Attach LED Technology
Rectangular LED RF Performance
–
450 & 460 nm – 430 mW min
High Reliability - Eutectic Attach
Low Forward Voltage (Vf) – 3.3 V Typical at 350 mA
Maximum DC Forward Current – 750 mA
InGaN Junction-Down Design for Improved Thermal
Management
No Wire Bonds Required
APPLICATIONS
•
General Illumination
− Aircraft
− Decorative Lighting
− Task Lighting
− Outdoor Illumination
•
•
•
•
•
White LEDs
Camera Flash
Projection Displays
Automotive
Large LCD Backlighting
–
Television
CxxxDA700-Sxx000 Chip Diagram
Top View
Die Cross Section
Bottom View
.-
CPR3EU Rev
Data Sheet:
DA700 LED
700 x 700 μm
Anode (+)
645 x 75 μm
Gap 75 μm
Cathode (-)
645 x 495 μm
t = 335 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Notes 1, 2 & 3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 350 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450DA700-Sxx000
C460DA700-Sxx000
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Bottom Area (μm)
Chip Top Area (μm)
Chip Thickness (μm)
AuSn Bond Pad Width – Anode (um)
AuSn Bond Pad Length – Anode (um)
AuSn Bond Pad Width – Cathode (um)
AuSn Bond Pad Length – Cathode (um)
Bond Pad Gap (μm)
AuSn Bond Pad Thickness (μm)
2.9
2.9
Typ.
3.3
3.3
Max.
3.5
3.5
Note 2
CxxxDA700-Sxx000
750 mA
1000 mA
150°C
5 V
-40°C to +100°C
-40°C to +100°C
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
CxxxDA700-Sxx000
Dimension
645 x 645
700 x 700
340 x 340
335
75
645
495
645
75
3
Tolerance
±35
±35
±35
±25
±15
±35
±35
±35
±15
±0.5
Notes:
1.
2.
3.
Maximum ratings are package-dependent. The above ratings were determined using a Cree 3.45-mm x 3.45-mm SMT package (with silicone
encapsulation and intrinsic AuSn metal die attach) for characterization. Ratings for other packages may differ. Junction temperature should be
characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values
expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1¾ packages (with
Hysol OS4000 epoxy encapsulant and intrinsic AuSn metal die attach). Optical characteristics measured in an integrating sphere using Illuminance E.
The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be
designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance.
800
700
Maximum Forward Current (mA)
600
500
400
300
200
100
0
25
50
75
100
125
150
175
Rth
j-a
= 10
Rth
j-a
= 15
Rth
j-a
= 20
Rth
j-a
= 25
C/W
C/W
C/W
C/W
Ambient Temperature (C)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3EU Rev. -
Standard Bins for CxxxDA700-Sxx000
LED chips are sorted to the radiant
flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxDA700-Sxxxxx) orders may be filled with any or all bins (CxxxDA700-xxxxx) contained
in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA.
C450DA700-S43000
Radiant Flux (mW)
C450DA700-0217
C450DA700-0218
C450DA700-0214
C450DA700-0210
C450DA700-0206
C450DA700-0219
C450DA700-0215
C450DA700-0211
C450DA700-0207
C450DA700-0220
C450DA700-0216
C450DA700-0212
C450DA700-0208
515
C450DA700-0213
485
C450DA700-0209
455
C450DA700-0205
430
445
447.5
450
Dominant Wavelength (nm)
452.5
455
C460DA700-S43000
Radiant Flux (mW)
C460DA700-0217
C460DA700-0218
C460DA700-0214
C460DA700-0210
C460DA700-0206
C460DA700-0219
C460DA700-0215
C460DA700-0211
C460DA700-0207
C460DA700-0220
C460DA700-0216
C460DA700-0212
C460DA700-0208
515
C460DA700-0213
485
C460DA700-0209
455
C460DA700-0205
430
455
457.5
460
Dominant Wavelength (nm)
462.5
465
Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3EU Rev. -
DW Shift (
0
-1
Characteristic Curves
0
100
200
300
-2
400
500
600
700
These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant
Relative Light Intensity Vs Junction Temperature
flux and dominant wavelength bins.
100%
If (mA)
Forward Current vs. Forward Voltage
95%
2
Wavelength Shift vs. Forward Current
Relative Intensity
DW Shift (nm)
700
600
500
90%
1
85%
If (mA)
400
300
200
100
0
0
1
2
3
4
5
80%
0
75%
-1
70%
25
50
75
100
125
150
-2
0
100
Junction Temperature (°C)
200
300
400
500
600
700
Vf (V)
If (mA)
Relative Intensity vs. Forward Current
200%
175%
150%
Dominant Wavelength Shift Vs Junction Temperature
6
Forward Current vs. Forward Voltage
700
5
Relative Intensity
125%
100%
75%
50%
25%
0%
0
100
200
300
400
500
600
700
If
DW Shift (nm)
(mA)
600
4
500
400
2
3
300
200
1
100
0
25
50
75
100
125
150
0
0
1
2
3
Junction Temperature (°C)
4
5
If (mA)
Relative Light Intensity Vs Junction Temperature
100%
0.000
Voltage Shift Vs Junction Temperature
Vf (V)
95%
2
Wavelength Shift vs. Forward Current
-0.050
-0.100
Relative
DW Shift (nm) Intensity
90%
1
85%
Voltage Shift (V)
25
50
75
100
125
150
-0.150
-0.200
-0.250
-0.300
-0.350
-0.400
80%
0
75%
-1
70%
25
50
75
100
125
150
-2
Junction Temperature (°C)
0
100
200
300
400
500
600
700
Junction Temperature (°C)
If (mA)
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc.
6
Dominant Wavelength Shift Vs Junction Temperature
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
5
CPR3EU Rev. -
DA700 blue
Radiation Pattern
This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and DA and DA700 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3EU Rev. -
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