N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt V
DS
* R
DS(on)
=2Ω
ZVN2106A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
60
450
8
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
60
0.8
2.4
20
500
100
2
2
300
75
45
20
MAX. UNIT CONDITIONS.
V
V
nA
nA
µA
A
Ω
mS
pF
pF
pF
V
DS
=18 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60 V, V
GS
=0
V
DS
=48 V, V
GS
=0V,
T=125°C
(2)
V
DS
=18V, V
GS
=10V
V
GS
=10V,I
D
=1A
V
DS
=18V,I
D
=1A
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
3-361
ZVN2106A
TYPICAL CHARACTERISTICS
I
D(On)
-On-State Drain Current (Amps)
4
V
DS-
Drain Source
Voltage (Volts)
V
GS=
10V
9V
8V
7V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
0.5A
0.25A
I
D=
1A
3
2
6V
5V
4V
1
0
0
1
2
3
4
5
3V
V
DS
- Drain Source
Voltage (Volts)
V
GS-
Gate Source Voltage
(Volts)
Saturation Characteristics
R
DS(ON)
-Drain Source On-Resistance
(Ω)
Voltage Saturation Characteristics
I
D(On)
-On-State Drain Current (Amps)
4
V
DS=
10V
10
3
2
1
I
D=
1A
0.5A
0.25A
1
0
0
1
2
3
4
5
6
7
8
9
10
0.1
1
2
3
4
5 6 7 8 9 10
20
V
GS-
Gate Source
Voltage (Volts)
V
GS
-Gate Source Voltage
(Volts)
Transfer Characteristics
On-resistance v gate-source voltage
2.4
0.7
Normalised R
DS(on)
and V
GS(th)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-80 -60 -40 -20
D
eR
nc
ta
sis
Re
V
GS=
10V
e
rc
I
D=
1A
ou
-S
ain
Dr
V
GS=
V
DS
I
D=
1mA
g
fs
-Transconductance (S)
)
on
S(
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
V
DS=
10V
Gate Thresh
old
Voltage V
GS
(th
)
0 20 40 60 80 100 120 140 160
T
j
-Junction Temperature (C°)
I
D
- Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Transconductance v drain current
3-362
ZVN2106A
TYPICAL CHARACTERISTICS
0.7
100
0.6
g
fs
-Transconductance (S)
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
8
10
V
DS=
10V
C-Capacitance (pF)
80
60
C
iss
40
20
C
oss
C
rss
0
10
20
30
40
50
V
GS
-Gate Source Voltage (Volts)
V
DS
-Drain Source Voltage (Volts)
Transconductance v gate-source voltage
V
DD
=
20V 30V 50V
I
D=
3A
Capacitance v drain-source voltage
16
V
GS
-Gate Source Voltage (Volts)
14
12
10
8
6
4
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Q-Charge (nC)
Gate charge v gate-source voltage
3-363
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