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ZVP2110ASTZ

Description
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size91KB,3 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZVP2110ASTZ Overview

Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVP2110ASTZ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)0.23 A
Maximum drain-source on-resistance8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-W3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

ZVP2110ASTZ Preview

P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
=8Ω
ZVP2110A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
-100
-230
-3
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
-750
8
125
100
35
10
7
15
12
15
-100
-1.5
-3.5
20
-1
-100
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
mA
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈-25V,
I
D
=-375mA
V
DS
=-25V, V
GS
=0V, f=1MHz
I
D
=-1mA, V
GS
=0V
ID=-1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=-100 V, V
GS
=0
V
DS
=-80 V, V
GS
=0V, T=125°C
(2)
V
DS
=-25 V, V
GS
=-10V
V
GS
=-10V,I
D
=-375mA
V
DS
=-25V,I
D
=-375mA
Static Drain-Source On-State R
DS(on)
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
3-421
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
(
3
)
ZVP2110A
TYPICAL CHARACTERISTICS
-1.6
V
GS=
-20V
-16V
-12V
-10V
-9V
-8V
-0.8
-7V
-0.6
-6V
-0.4
-0.2
0
0
-10
-20
-30
-40
-5V
-4.5V
-4V
-4V
-3.5V
-50
-1.6
V
GS
=
-20V
-16V
-12V
-1.2
-1.0
-0.8
-7V
-0.6
-0.4
-0.2
0
0
-2
-4
-6
-8
-5V
-4.5V
-4V
-3.5V
-10
-6V
-10V
-9V
-8V
I
D(On)
- Drain Current (Amps)
I
D(On)
- Drain Current (Amps)
-1.4
-1.2
-1.0
-1.4
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
V
DS-
Drain Source
Voltage (Volts)
-8
-1.6
I
D(On)
Drain Current (Amps)
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
-2
-4
-6
-8
-10
V
DS=-
10V
-6
-4
I
D=
-0.5A
-0.25A
0
0
-2
-4
-6
-8
-0.1A
-10
-2
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
R
DS(on)
-Drain Source On Resistance
(Ω)
Transfer Characteristics
100
2.6
Normalised R
DS(on)
and V
GS(th)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-40 -20
0
V
GS=
-10V
I
D=
-0.375A
V
GS
=-4V
-5V
10
-7V
-10V
-20V
e
urc
-So
ain
Dr
Re
R
ce
an
ist
s
)
(on
DS
V
GS=
V
DS
I
D=
-1mA
Gate Thresh
old Voltage
V
GS(th)
1
10
100
1000
20 40 60 80 100 120 140 160 180°C
I
D-
Drain Current (mA)
On-resistance v drain current
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3-422
ZVP2110A
TYPICAL CHARACTERISTICS
250
250
V
DS=
-10V
g
fs
-Transconductance (mS)
200
150
100
50
0
0
-0.2
-0.4
-0.6
-0.8
g
fs
-Transconductance (mS)
200
150
100
50
0
0
-2
-4
-6
-8
-10
V
DS=
-10V
-1.0
-1.2
-1.4
-1.6
I
D
- Drain Current (Amps)
V
GS
-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
0
-2
-4
-6
-8
-10
-12
-14
-16
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
=
-25V -50V -100V
I
D=-
0.5A
80
C-Capacitance (pF)
60
C
iss
40
20
C
oss
0
0
-20
-40
-60
-80
C
rss
-100
V
DS
-Drain Source Voltage (Volts)
Q-Gate Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-423

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Description Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified? conform to conform to conform to
Maker Zetex Semiconductors Zetex Semiconductors Zetex Semiconductors
package instruction IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3
Reach Compliance Code compliant unknown not_compliant
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 100 V 100 V 100 V
Maximum drain current (ID) 0.23 A 0.23 A 0.23 A
Maximum drain-source on-resistance 8 Ω 8 Ω 8 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-W3 R-PSIP-W3 R-PSIP-W3
JESD-609 code e3 e3 e3
Humidity sensitivity level 1 1 1
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface MATTE TIN MATTE TIN Matte Tin (Sn)
Terminal form WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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