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ZXMN6A11GTC

Description
Small Signal Field-Effect Transistor, 3.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size249KB,8 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
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ZXMN6A11GTC Overview

Small Signal Field-Effect Transistor, 3.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

ZXMN6A11GTC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSOT-223, 4 PIN
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW THRESHOLD
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)3.8 A
Maximum drain-source on-resistance0.14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
ZXMN6A11G
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=60V; R
DS(ON)
=0.15
D
=3.8A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes them
ideal for high efficiency, low voltage, power management applications.
FEATURES
SOT223
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMN6A11GTA
ZXMN6A11GTC
REEL SIZE
7”
13”
TAPE WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
Top View
S
D
D
G
DEVICE MARKING
ZXMN
6A11
PROVISIONAL ISSUE B - AUGUST 2001
1

ZXMN6A11GTC Related Products

ZXMN6A11GTC ZXMN6A11GTA
Description Small Signal Field-Effect Transistor, 3.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Small Signal Field-Effect Transistor, 3.8A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Is it Rohs certified? conform to conform to
package instruction SOT-223, 4 PIN SOT-223, 4 PIN
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Other features LOW THRESHOLD LOW THRESHOLD
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (ID) 3.8 A 3.8 A
Maximum drain-source on-resistance 0.14 Ω 0.14 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G4 R-PDSO-G4
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 4 4
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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