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MAGX-000035-PB1PPR

Description
GaN on SiC D-Mode Transistor Technology Common-Source Configuration
File Size1MB,10 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
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MAGX-000035-PB1PPR Overview

GaN on SiC D-Mode Transistor Technology Common-Source Configuration

MAGX-000035-01500P
GaN Wideband 15 W Pulsed Transistor in Plastic Package
DC - 3.5 GHz
Features
GaN on SiC D-Mode Transistor Technology
Unmatched, Ideal for Pulsed Applications
50 V Typical Bias, Class AB
Common-Source Configuration
Thermally-Enhanced 3 x 6 mm 14-Lead DFN
MTTF = 600 years (T
J
< 200°C)
Halogen-Free “Green” Mold Compound
RoHS* Compliant and 260°C Reflow Compatible
MSL-1
Rev. V3
Description
The MAGX-000035-01500P is a GaN on SiC
unmatched power device offering the widest RF
frequency capability, most reliable high voltage
operation, lowest overall power transistor size, cost
and weight in a “TRUE SMT” plastic-packaging
technology.
Use of an internal stress buffer technology allows
reliable operation at junction temperatures up to
200°C. The small package size and excellent RF
performance make it an ideal replacement for costly
flanged or metal-backed module components.
Functional Schematic
1
2
3
4
5
6
7
NC NC
G
15
D
G
G
NC NC
Ordering Information
1,2
Part Number
MAGX-000035-01500P
MAGX-000035-0150TP
MAGX-000035-PB1PPR
Package
Bulk Packaging
250 Piece Reel
Sample Board
NC NC NC
14
13 12
NC NC NC
11 10
9
8
Pin Configuration
3
Pin No.
1
Function
No Connection
No Connection
V
GG
/RF
IN
V
GG
/RF
IN
V
GG
/RF
IN
No Connection
No Connection
Pin No.
8
9
10
11
12
13
14
15
Function
No Connection
No Connection
No Connection
V
DD
/RF
OUT
No Connection
No Connection
No Connection
Paddle
4
1. Reference Application Note M513 for reel size information.
2. When ordering sample evaluation boards, choose a standard
frequency range indicated on page 4 or specify a desired
custom range. Custom requests may increase lead times.
2
3
4
5
6
7
* Restrictions on Hazardous Substances, European Union
Directive 2002/95/EC.
1
3. MACOM recommends connecting unused package pins to
ground.
4. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
For further information and support please visit:
https://www.macomtech.com/content/customersupport

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Description GaN on SiC D-Mode Transistor Technology Common-Source Configuration GaN Wideband 15 W Pulsed Transistor in Plastic Package RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Junction FET, 6 X 3 MM, GREEN, PLASTIC, DFN-14
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