ZTX788ASTOB datasheet, PDF - EEWORLD Datasheet

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ZTX788ASTOB: DescriptionSmall Signal Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size65KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZTX788ASTOB Overview

Small Signal Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN

ZTX788ASTOB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	80
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	MATTE TIN
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Maximum off time (toff)	500 ns
Maximum opening time (tons)	40 ns

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PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

PROVISIONAL DATASHEET ISSUE 2 SEPTEMBER 94

FEATURES

* 15 Volt V

CEO

* Gain of 200 at I

C

=2 Amps

* Very low saturation voltage

ZTX788A

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation

at T

amb

=25°C

derate above 25°C

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

totp

P

tot

T

j

:T

stg

-20

-15

-5

-10

-3

1.5

1

5.7

E-Line

TO92 Compatible

VALUE

UNIT

V

A

W

mW/°C

°C

Operating and Storage Temperature Range

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward Current

Transfer Ratio

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

300

250

200

80

3-271

MIN.

-20

-15

-5

TYP.

-30

-20

-8.5

-0.1

-10

-0.1

MAX.

UNIT

V

µ

A

µ

A

µ

A

CONDITIONS.

I

C

=-100

µ

A

I

C

=-10mA*

I

E

=-100

µ

A

V

CB

=-10V

V

CB

=-10V, T

amb

=100°C

V

EB

=-4V

I

C

=-0.1A, I

B

=-2mA*

I

C

=-2A, I

B

=-20mA*

I

C

=-3A, I

B

=-200mA*

I

C

=-2A, I

B

=-20mA*

IC=-2A, V

CE

=-3V*

I

C

=-10mA, V

CE

=-1V*

I

C

=-1A, V

CE

=-1V*

I

C

=-2A, V

CE

=-1V*

I

C

=-10A, V

CE

=-2V*

-0.025 -0.035 V

-0.25 -0.32 V

-0.28 -0.33 V

-0.85

-0.8

800

-1.0

V

ZTX788ASTOB Related Products

	ZTX788ASTOB	ZTX788ASTOA	ZTX788ASTZ
Description	Small Signal Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN	Small Signal Bipolar Transistor, 3A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	TO-92, 3 PIN
Reach Compliance Code	unknown	not_compliant	_compli
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	3 A	3 A	3 A
Collector-emitter maximum voltage	15 V	15 V	15 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	80	80	80
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
JESD-609 code	e3	e3	e3
Humidity sensitivity level	1	1	1
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	MATTE TIN	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	40	40
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz
Maximum off time (toff)	500 ns	500 ns	500 ns
Maximum opening time (tons)	40 ns	40 ns	40 ns

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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