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BSB019N03LXGXUMA1

Description
Power Field-Effect Transistor, 31A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size548KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSB019N03LXGXUMA1 Overview

Power Field-Effect Transistor, 31A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN

BSB019N03LXGXUMA1 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionCHIP CARRIER, R-MBCC-N3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)290 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)31 A
Maximum drain-source on-resistance0.0019 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-MBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)400 A
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
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