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BCW32R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size419KB,7 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric Compare View All

BCW32R Overview

Transistor

BCW32R Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)150
JESD-609 codee0
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.35 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)300 MHz

BCW32R Related Products

BCW32R BCW31R BCW33R
Description Transistor Transistor Transistor
Is it Rohs certified? incompatible incompatible incompatible
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Configuration Single Single Single
Minimum DC current gain (hFE) 150 90 270
JESD-609 code e0 e0 e0
Maximum operating temperature 175 °C 175 °C 175 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.35 W 0.35 W 0.35 W
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 300 MHz 300 MHz 300 MHz
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