R216CH10FN0 datasheet, PDF - EEWORLD Datasheet

R216CH10FN0: DescriptionSilicon Controlled Rectifier, 925000mA I(T), 1000V V(DRM),; CategoryAnalog mixed-signal IC Trigger device; File Size846KB，6 Pages; ManufacturerIXYS; Related ProductsFound1parts with similar functions to R216CH10FN0

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R216CH10FN0 Overview

Silicon Controlled Rectifier, 925000mA I(T), 1000V V(DRM),

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	compli
Nominal circuit commutation break time	10 µs
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	1000 mA
Maximum leakage current	60 mA
On-state non-repetitive peak current	6300 A
Maximum on-state voltage	1.85 V
Maximum on-state current	925000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	1000 V
surface mount	NO
Trigger device type	SCR
Base Number Matches	1

Part Number	Manufacturer	Description
R216CH10FN0	Littelfuse	Silicon Controlled Rectifier, 925000mA I(T), 1000V V(DRM),

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