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ZC826N

Description
Variable Capacitance Diode, 100pF C(T), Silicon, Hyperabrupt, TO-92 STYLE, E-LINE PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size39KB,1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

ZC826N Overview

Variable Capacitance Diode, 100pF C(T), Silicon, Hyperabrupt, TO-92 STYLE, E-LINE PACKAGE-2

ZC826N Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionR-PSIP-W2
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Minimum diode capacitance ratio5
Nominal diode capacitance100 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PSIP-W2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.3 W
Certification statusNot Qualified
minimum quality factor100
surface mountNO
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Varactor Diode ClassificationHYPERABRUPT
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