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ZC830TC

Description
Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size64KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

ZC830TC Overview

Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt

ZC830TC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio4.5
Nominal diode capacitance10 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
minimum quality factor300
Maximum reverse current0.02 µA
Reverse test voltage20 V
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Varactor Diode ClassificationHYPERABRUPT
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