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FDW2516NZ

Description
5.8A, 20V, 0.03ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, TSSOP-8
CategoryDiscrete semiconductor    The transistor   
File Size817KB,6 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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FDW2516NZ Overview

5.8A, 20V, 0.03ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, TSSOP-8

FDW2516NZ Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeTSSOP
package instructionTSSOP-8
Contacts8
Reach Compliance Codeunknown
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)5.8 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)20 A
Certification statusCOMMERCIAL
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
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