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K6X4008T1F-GQ850

Description
Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32
Categorystorage    storage   
File Size126KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K6X4008T1F-GQ850 Overview

Standard SRAM, 512KX8, 85ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32

K6X4008T1F-GQ850 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeSOIC
package instructionSOP, SOP32,.56
Contacts32
Reach Compliance Codeunknown
ECCN code3A991.B.2.A
Maximum access time85 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
length20.47 mm
memory density4194304 bit
Memory IC TypeSTANDARD SRAM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals32
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize512KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP32,.56
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply3/3.3 V
Certification statusNot Qualified
Maximum seat height3 mm
Maximum standby current0.00003 A
Minimum standby current2 V
Maximum slew rate0.025 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width11.43 mm
K6X4008T1F Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
0.1
Initial Draft
Revised
- Added 55ns product( Vcc = 3.0V~3.6V)
Revised
- Added Commercial product
Revised
- Errata correction : corrected commercial product family name from
K6X4008T1F-F to K6X4008T1F-B in PRODUCT FAMILY.
Finalized
- Changed I
CC
from 4mA to 2mA
- Changed I
CC
1 from 4mA to 3mA
- Changed I
CC
2 from 30mA to 25mA
- Changed I
SB
1
(Commercial)
from 15µA to 10µA
- Changed I
SB
1
(industrial)
from 20µA to 10µA
- Changed I
SB
1
(Automotive)
from 30µA to 20µA
- Changed I
DR
(Commercial)
from 15µA to 10µA
- Changed I
DR
(industrial)
from 20µA to 10µA
- Changed I
DR
(Automotive)
from 30µA to 20µA
Revised
- Added lead free product
- Changed I
SB
1
(Automotive)
from 20µA to 30µA
- Changed I
DR
(Automotive)
from 20µA to 30µA
Draft Data
July 29, 2002
October 14, 2002
Remark
Preliminary
Preliminary
0.2
December 2, 2002
Preliminary
0.21
March 26, 2003
Preliminary
1.0
September 16, 2003
Final
2.0
March 7, 2005
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0
March 2005
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