numbers reflect the limitations of the test circuit rather than the
device itself.
IS
≤
-
ID
43A
di
/
dt
≤
700A/µs
VR
≤
600V
TJ
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.25
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.20
0.9
0.15
0.7
0.5
0.10
0.3
0.05
0.1
0.05
10
-5
10
-4
SINGLE PULSE
9-2004
Note:
PDM
t1
t2
Duty Factor D = t1/t
2
Peak TJ = PDM x Z
θJC
+ TC
050-7053 Rev C
0
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Typical Performance Curves
I
D
, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
RC MODEL
120
100
80
60
40
APT6013B2LL_LLL
VGS =15 &10V
8V
0.014
0.006F
7V
Power
(watts)
0.076
0.019F
6.5V
0.13
Case temperature. (°C)
0.278F
6V
20
0
5.5V
5V
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
160
I
D
, DRAIN CURRENT (AMPERES)
0
5
10
15
20
25
30
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.2
V
140
120
100
80
60
40
20
0
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1.15
1.10
1.05
1.00
0.95
0.90
GS
NORMALIZED TO
= 10V @ I = 21.5A
D
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
0 1
2 3
4 5 6
7 8
9 10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
0
45
40
I
D
, DRAIN CURRENT (AMPERES)
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.15
20
40
60
80
100
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
35
30
25
20
15
10
5
0
25
1.10
1.05
1.00
0.95
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
0.90
-50
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
= 21.5A
= 10V
V
2.0
1.5
1.0
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
GS
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7053 Rev C
9-2004
172
I
D
, DRAIN CURRENT (AMPERES)
100
OPERATION HERE
LIMITED BY RDS (ON)
20,000
10,000
APT6013B2LL_LLL
Ciss
C, CAPACITANCE (pF)
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1,000
Coss
100
Crss
10mS
10
0
10
20
30
40
50
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
I
D
= 43A
12
VDS= 120V
8
VDS= 300V
VDS= 480V
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
600
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
1
TJ =+150°C
TJ =+25°C
10
4
40
80
120
160
200
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
t
d(off)
80
0
0
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
V
DD
G
= 400V
R
= 5Ω
100
80
t
r
and t
f
(ns)
T = 125°C
J
L = 100µH
V
DD
G
t
d(on)
and t
d(off)
(ns)
= 400V
60
R
= 5Ω
T = 125°C
J
L = 100µH
60
40
t
f
40
t
d(on)
t
r
20
20
0
10
0
10
40
50
60
70
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
DD
G
20
30
40
50
60
70
I
D
(A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
3000
2500
SWITCHING ENERGY (µJ)
V
I
DD
20
30
2000
V
= 400V
= 400V
R
= 5Ω
D
J
= 43A
1600
E
on
and E
off
(µJ)
T = 125°C
J
T = 125°C
L = 100µH
E
ON
includes
diode reverse recovery
L = 100µH
E
ON
includes
diode reverse recovery
E
off
2000
1500
1000
500
0
1200
800
E
on
400
E
off
E
on
050-7053 Rev C
9-2004
0
10
40
50
60
70
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20
30
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
APT6013B2LL_LLL
90%
10%
Gate Voltage
T
J
125°C
90%
Drain Current
90%
Gate Voltage
t
d(off)
Drain Voltage
T 125°C
J
t
d(on)
t
r
5%
10%
Switching Energy
5%
Drain Voltage
t
f
10%
0
Switching Energy
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V
DD
I
D
V
DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAX
TM
(B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
Drain
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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