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R219CH10CN0

Description
Silicon Controlled Rectifier, 1100000mA I(T), 1000V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size749KB,6 Pages
ManufacturerIXYS
Related ProductsFound1parts with similar functions to R219CH10CN0
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R219CH10CN0 Overview

Silicon Controlled Rectifier, 1100000mA I(T), 1000V V(DRM),

R219CH10CN0 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Nominal circuit commutation break time10 µs
Critical rise rate of minimum off-state voltage20 V/us
Maximum DC gate trigger current300 mA
Maximum DC gate trigger voltage3 V
Maximum holding current1000 mA
Maximum leakage current70 mA
On-state non-repetitive peak current9000 A
Maximum on-state voltage2.04 V
Maximum on-state current1100000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1000 V
surface mountNO
Trigger device typeSCR
Base Number Matches1

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