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STPS30150

Description
15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size67KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

STPS30150 Overview

15 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB

STPS30150 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionPLASTIC PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialssilicon
Diode typerectifier diode
applicationHigh voltage POWER
Phase1
Maximum repetitive peak reverse voltage150 V
Maximum average forward current15 A
Maximum non-repetitive peak forward current220 A
®
STPS30150CT/CW/CFP
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
A1
I
F(AV)
V
RRM
Tj
V
F
(max)
FEATURES AND BENEFITS
s
2 x 15 A
150 V
175°C
0.75 V
A2
A2
K
A1
K
TO-220FPAB
STPS30150CFP
s
s
s
s
HIGH JUNCTION TEMPERATURE CAPABILITY
GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
INSULATED PACKAGE: TO-220FPAB
Insulating voltage: 2000V DC
Capacitance: 45pF
AVALANCHE CAPABILITY SPECIFIED
A2
K
A1
A2
K
A1
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency Switched Mode Power
Supplies.
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
RMS forward current
Average forward current
δ
= 0.5
Parameter
Repetitive peak reverse voltage
TO-247
STPS30150CW
TO-220AB
STPS30150CT
Value
150
30
per diode
per device
15
30
tp = 10 ms sinusoidal
tp = 1µs
Tj = 25°C
220
10500
- 65 to + 175
175
10000
Unit
V
A
A
TO-220FPAB Tc = 110°C
TO-220AB
TO-247
Tc = 155°C
I
FSM
P
ARM
T
stg
Tj
dV/dt
* :
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
A
W
°C
°C
V/µs
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth
(
j
a
)
1/6
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