P4KE530 & P4KE550
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in Unidirectional only
• Excellent clamping capability
• Very fast response time
DO-204AL (DO-41)
• Low incremental surge resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
MAJOR RATINGS AND CHARACTERISTICS
V
(BR)
Unidirectional
P
PPM
P
D
V
WM
V
C
T
j
max.
530 V, 550 V
300 W
1.0 W
477 V, 495 V
760 V
175 °C
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for
consumer,
computer,
industrial
and
telecommunication.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy over passivated chip
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 4)
Peak pulse power dissipation
(1, 2)
(Fig. 1)
Stand-off voltage
Operating junction and storage temperature range
Note:
(1) Non repetitive current pulse per Fig. 3 and derated above 25 °C per Fig. 2
(2) Peak pulse power waveform is 10/1000 µs
SYMBOL
P
D
P
PPM
V
WM
T
J
, T
STG
477
- 55 to + 150
P4KE530
1.0
Minimum 300
495
P4KE550
UNIT
W
W
V
°C
Document Number 88366
20-Jun-06
www.vishay.com
1
P4KE530 & P4KE550
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Minimum breakdown voltage
Max. clamping voltage
TEST CONDITIONS
at 100 µA
at 400 mA, 10/1000 µs waveform
SYMBOL
V
(BR)
V
C
I
D
C
J
C
J
P4KE530
530
760
1.0
650
90
7.5
P4KE550
550
UNIT
V
V
µA
mV°C
pF
pF
Maximum DC reverse leakage current at V
WM
Typical temperature coefficient
Typical capacitance
(3)
Note:
(1) Non repetitive current pulse per Fig. 3 and derated above 25 °C per Fig. 2
(2) Peak pulse power waveform is 10/1000 µs
(3) Measured at 1 MHz
of V
(BR)
at 0 V
at 200 V
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
SYMBOL
R
θJL
R
θJA
P4KE530
27
75
P4KE550
UNIT
°C/W
°C/W
ORDERING INFORMATION
PREFERRED P/N
P4K4530-E3/54
UNIT WEIGHT (g)
0.350
PREFERRED PACKAGE CODE
54
BASE QUANTITY
4000
DELIVERY MODE
13" Diameter Paper Tape & Reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Non-repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
10
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
P
PPM
, Peak Pulse Power (kW)
75
50
1
25
0.1
0.1
µs
0
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
0
25
50
75
100
125
150
175
200
td, Pulse
Width
T
J
- Initial Temperature (°C)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial
Junction Temperature
www.vishay.com
2
Document Number 88366
20-Jun-06
P4KE530 & P4KE550
Vishay General Semiconductor
150
1.00
tr = 10
µsec.
Peak
Value
I
PPM
T
J
= 25 °C
Pulse
Width
(td)
is defined as the point
where
the peak current
decays to 50 % of I
PPM
60 Hz
Resistive or
Inductive Load
0.75
I
PPM
- Peak Pulse Current, % I
RSM
100
Half
Value
- IPP
2
I
PPM
50
10/1000
µsec. Waveform
as defined
by
R.E.A.
P
D
, Power Dissipation (W)
0.50
L = 0.375" (9.5 mm)
Lead Lengths
0.25
td
0
0
1.0
2.0
3.0
4.0
0
0
25
50
75
100
125
150
175
200
t - Time (ms)
T
L
- Lead Temperature (°C)
Figure 3. Pulse Waveform
Figure 4. Pulse Derating Curve
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
APPLICATION NOTES
• Respect Thermal Resistance (PCB Layout) - as the
temperature coefficient also contributes to the
clamping voltage
• Select minimum breakdown voltage, so you get
acceptable power dissipation and PCB tie point
temperature. Devices with higher breakdown
voltage will have a shorter conduction time and will
dissipate less power
• Clamping voltage is influenced by internal
resistance - design approximation is 7 V per
100 mA slope
• Keep temperature of TVS lower than TOPSwitch
®
as a recommendation
• Maximum current is determined by the maximum
T
J
and can be higher than 300 mA. Contact
supplier for different clamping voltage/current
arrangements
• Minimum breakdown voltage can be customized for
other applications. Contact supplier
• TOPSwitch
®
is a registered trademark of Power
Integrations, Inc.
Document Number 88366
20-Jun-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
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