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PDC2UV6484B-103T-S

Description
Synchronous DRAM Module, 2MX64, 6ns, CMOS, PDMA168
Categorystorage    storage   
File Size191KB,13 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
Download Datasheet Parametric Compare View All

PDC2UV6484B-103T-S Overview

Synchronous DRAM Module, 2MX64, 6ns, CMOS, PDMA168

PDC2UV6484B-103T-S Parametric

Parameter NameAttribute value
MakerFUJITSU
package instructionDIMM, DIMM168
Reach Compliance Codeunknown
Maximum access time6 ns
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
JESD-30 codeR-PDMA-N168
memory density134217728 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width64
Number of terminals168
word count2097152 words
character code2000000
Maximum operating temperature70 °C
Minimum operating temperature
organize2MX64
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle4096
Maximum standby current0.0032 A
Maximum slew rate1.04 mA
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
data sheet
March 1998
Revision 1.0
PDC2UV6484B-(75/102/103)T-S
16MByte (2M x 64) CMOS, PC/100
Synchronous DRAM Module
General Description
The PDC2UV6484B-(75/102/103)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M
words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
The module utilizes eight Fujitsu MB81F16822B-(75/102/103) FN CMOS 2Mx8 synchronous dynamic RAMs in surface mount
package (TSOP) on an epoxy laminated substrate. Each device is accompanied by a decoupling capacitor for improved noise
immunity.
A 256 Byte Serial EEPROM contains the module configuration information.
Features
• High Density: 16MByte
• Cycle Time:
• Low Power:
7.5ns (-75), 10ns (-102), 10ns (-103)
Active 4.3W (-75), 4.0W (-102), 3.7W (-103)
• LVTTL-compatible inputs and outputs
• Separate power and ground planes to improve noise immunity
• Single power supply of 3.3V±0.3V
• Height: 1.250 inch
ABSOLUTE MAXIMUM RATINGS
Item
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperate
Short Circuit Output Current
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
-0.5 to +4.6
10.4
0 to +70
-55 to +125
Unit
V
W
°
C
°
C
mA
±
50
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= 0 to +70
°C)
Symbol
V
CC
V
SS
V
IH
V
IL
Parameter
Supply Voltage
Ground
Input High voltage
Input Low voltage
Min
3.0
0
2.0
-0.5
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.5
0.8
Unit
V
V
V
V
Fujitsu Microelectronics, Inc./Fujitsu Mikroelektronik GmbH
1

PDC2UV6484B-103T-S Related Products

PDC2UV6484B-103T-S PDC2UV6484B-102T-S PDC2UV6484B-75T-S
Description Synchronous DRAM Module, 2MX64, 6ns, CMOS, PDMA168 Synchronous DRAM Module, 2MX64, 6ns, CMOS, PDMA168 Synchronous DRAM Module, 2MX64, 6ns, CMOS, PDMA168
Maker FUJITSU FUJITSU FUJITSU
package instruction DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168
Reach Compliance Code unknown unknown unknown
Maximum access time 6 ns 6 ns 6 ns
Maximum clock frequency (fCLK) 100 MHz 100 MHz 133 MHz
I/O type COMMON COMMON COMMON
JESD-30 code R-PDMA-N168 R-PDMA-N168 R-PDMA-N168
memory density 134217728 bit 134217728 bit 134217728 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 64 64 64
Number of terminals 168 168 168
word count 2097152 words 2097152 words 2097152 words
character code 2000000 2000000 2000000
Maximum operating temperature 70 °C 70 °C 70 °C
organize 2MX64 2MX64 2MX64
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIMM DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096
Maximum standby current 0.0032 A 0.0032 A 0.0032 A
Maximum slew rate 1.04 mA 1.12 mA 1.2 mA
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL
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