PN2907A / MMBT2907A / PZT2907A — 60 V PNP General Purpose Transistor
July 2013
PN2907A / MMBT2907A / PZT2907A
60 V PNP General Purpose Transistor
Features
• High DC Current Gain (hFE) Range: 100 – 300
•
•
•
•
Description
The PN2907A, MMBT2907A, and PZT2907A are 60 V
-PNP bipolar transistors designed for use as a gen-
High-Current Gain Bandwidth Product (f
T
):
eral-purpose amplifier or switch in applications that
200 MHz (Minimum.)
require up to 500 mA. Offered in an ultra-small sur-
face-mount package (SOT-223), the PZT2907A is
Maximum Turn-On Time (t
on
): 45 ns
ideal for space-constrained systems. The NPN com-
Maximum Turn-Off Time (t
off
): 100 ns
plementary types are the PN2222A, MMBT2222A, and
Ultra-Small Surface-Mount Package: SOT-223 (PZT2907A) PZT2222A; respectively.
Applications
• General-Purpose Amplifier
• Switch
PN2907A
MMBT2907A
PZT2907A
Ordering Information
Part Number
PN2907ABU
PN2907ATF
PN2907ATAR
PN2907ATA
PN2907ATFR
MMBT2907A_D87Z
MMBT2907A
PZT2907A
Top Mark
2907A
2907A
2907A
2907A
2907A
2F
2F
2907A
Package
TO-92 3 L
TO-92 3 L
TO-92 3 L
TO-92 3 L
TO-92 3 L
SOT-23 3L
SOT-23 3L
SOT-223 4L
Packing Method
Bulk
Tape and Reel
Ammo
Ammo
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
© 1998 Fairchild Semiconductor Corporation
PN2907A / MMBT2907A / PZT2907A Rev. 1.1.1
1
www.fairchildsemi.com
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General Purpose Transistor
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG(2)
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Operating and Storage Junction Temperature Range
Ratings
-60
-60
-5.0
-800
-55 to + 150
Units
V
V
V
mA
°C
Notes:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
These ratings are based on a maximum junction temperature of 150
°C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low duty-cycle operations.
2. All voltages (V) and currents (A) are negative polarity for PNP Transistors.
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJC
R
θJA
Note:
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
PN2897A
625
5.0
83.3
200
357
125
MMBT2907A
350
2.8
PZT2907A
1000
8.0
Units
mW
mW/°C
°C/W
°C/W
3. PCB size FR-4 76 x 114 x 0.6T mm
3
(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 1998 Fairchild Semiconductor Corporation
PN2907A / MMBT2907A / PZT2907A Rev. 1.1.1
2
www.fairchildsemi.com
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General Purpose Transistor
Electrical Characteristics
(4)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
Off Characteristics
Parameter
Test Condition
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
μA,
I
E
= 0
I
E
= 10
μA,
I
C
= 0
V
CB
= 30 V, V
EB
= 0.5 V
V
CE
= 30 V, V
BE
= 0.5 V
V
CE
= 50 V, I
E
= 0
V
CB
= 50 V, I
E
= 0,
T
A
=150°C
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
Min.
-60
-60
-5.0
Max.
Units
V
V
V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
(5)
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
I
B
I
CEX
I
CBO
Emitter-Base Breakdown Voltage
Base Cut-Off Current
Collector Cut-Off Current
Collector Cut-Off Current
-50
-50
-0.02
-20
nA
nA
μA
μA
On Characteristics
-75
-100
-100
-100
-50
-0.4
-1.6
-1.3
-2.6
V
V
V
V
-300
I
DSS
DC Current Gain
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
(5)
I
C
= 500 mA, V
CE
= 10 V
(5)
I
C
= 150 mA, V
CE
= 15 V
I
C
= 500 mA, V
CE
= 50 V
I
C
= 150 mA, V
CE
= 15 V
(5)
I
C
= 500 mA, V
CE
= 50 V
I
C
= 50 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 100 kHz
V
EB
= 2.0 V, I
C
= 0,
f = 100 kHz
I
DSS
I
DSS
Collector-Emitter Saturation Voltage
(5)
Base-Emitter Saturation Voltage
Small Signal Characteristics
f
T
C
obo
C
ibo
Current Gain-Bandwidth Product
Output Capacitance
Input Capacitance
200
-8.0
-30
MHz
pF
pF
Switching Characteristics
t
on
t
d
t
r
t
off
t
s
t
f
Notes:
4. All voltages (V) and currents (A) are negative polarity for PNP transistors.
5. Pulse test: pulse width
≤
300
μs,
duty cycle
≤
2.0%
Turn-on Time
Delay
Rise Time
Turn-off Time
Storage Time
Fall Time
V
CC
= 32 V, I
C
= 150 mA,
I
B1
= 15 mA
V
CC
= 6.0 V, I
C
= 150 mA,
I
B1
= I
B2
= 15mA
-45
-10
-40
-100
-80
-30
ns
© 1998 Fairchild Semiconductor Corporation
PN2907A / MMBT2907A / PZT2907A Rev. 1.1.1
3
www.fairchildsemi.com
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General Purpose Transistor
Typical Performance Characteristics
Figure 1.
Typical Pulsed Current Gain
vs.
Collector Current
Figure 2.
Collector-Emitter Saturation Voltage
vs. Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter ON Voltage vs. Collector
Current
Figure 5. Collector-Cut-Off Current vs. Ambient
Temperature
Figure 6. Input and Output Capacitance vs. Reverse
Bias Voltage
© 1998 Fairchild Semiconductor Corporation
PN2907A / MMBT2907A / PZT2907A Rev. 1.1.1
4
www.fairchildsemi.com
PN2907A / MMBT2907A / PZT2907A — 60 V PNP General Purpose Transistor
Typical Performance Characteristics
(Continued)
Figure 7. Switching Times vs. Collector Current
Figure 8. Turn-On and Turn-Off Times vs. Collector
Current
Figure 9. Rise Time vs. Collector and Turn-On Base
Currents
Figure 10. Power Dissipation vs. Ambient
Temperature
© 1998 Fairchild Semiconductor Corporation
PN2907A / MMBT2907A / PZT2907A Rev. 1.1.1
5
www.fairchildsemi.com
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