EMT1 / UMT1N / IMT1A
Transistors
General Purpose Transistor
(Isolated Dual Transistors)
EMT1 / UMT1N / IMT1A
Features
1) Two 2SA1037AK chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent,
eliminating interference.
Dimensions
(Unit : mm)
EMT1
(6) (5) (4)
(1) (2) (3)
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : T1
Structure
Epitaxial planar type
PNP silicon transistor
UMT1N
(6) (5) (4)
Equivalent circuit
EMT1 / UMT1N
(3)
(2)
(1)
(1) (2) (3)
IMT1A
(4)
(5)
(6)
Each lead has same dimensions
Tr
1
Tr
2
Tr
2
Tr
1
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : T1
IMT1A
(4)
(5)
(6)
(3)
(2)
(1)
(4)
(5)
(6)
The following characteristics apply to both
Tr
1
and Tr
2
.
(3)
(2)
(1)
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
EMT1, UMT1N
power
dissipation IMT1A
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−60
−50
−6
−150
150 (TOTAL)
300 (TOTAL)
150
−55
to +150
°C
°C
Unit
V
V
V
mA
mW
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
Abbreviated symbol : T1
∗
1
∗
2
∗1
120mW per element must not be exceeded.
∗2
200mW per element must not be exceeded.
Rev.C
1
/
3
EMT1 / UMT1N / IMT1A
Transistors
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
−60
−50
−6
−
−
−
120
−
−
Typ.
−
−
−
−
−
−
−
140
4
Max.
−
−
−
−0.1
−0.1
−0.5
560
−
5
Unit
V
V
V
µA
µA
V
−
MHz
pF
I
C
=
−50µA
I
C
=
−1mA
I
E
=
−50µA
V
CB
=
−60V
V
EB
=
−6V
I
C
/I
B
=
−50mA/−5mA
V
CE
=
−6V,
I
C
=
−1mA
V
CE
=
−12V,
I
E
= 2mA, f = 100MHz
V
CB
=
−12V,
I
E
= 0A, f = 1MHz
Conditions
Packaging specifications
Package
Code
Type
EMT1
UMT1N
IMT1A
−
−
−
Basic ordering unit (pieces)
T2R
8000
Taping
TN
3000
−
T110
3000
−
−
Electrical characteristic curves
-50
COLLECTOR CURRENT : Ic
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Ta = 100°C
25°C
-20
−
40°C
-10
-5
-2
-1
-0.5
-0.2
-0.1
V
CE
=
−6V
-10
-35.0
Ta = 25°C
-31.5
-28.0
-24.5
-100
Ta = 25°C
-500
-450
-400
-350
-300
-8
-80
-6
-21.0
-17.5
-60
-250
-200
-4
-14.0
-10.5
-40
-150
-100
-2
-7.0
-3.5µA
I
B
= 0
-20
-50µA
I
B
= 0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
-1
-2
-3
-4
-5
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter propagation
characteristics
500
Fig.2 Grounded emitter output
characteristics (
Ι
)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
500
Fig.3 Grounded emitter output
characteristics (
ΙΙ
)
Ta = 25°C
V
CE
= -5V
-3V
-1V
Ta = 100°C
25°C
-1
Ta = 25°C
DC CURRENT GAIN : h
FE
DC CURRENT GAIN : h
FE
-0.5
200
-40°C
200
100
-0.2
100
I
C
/I
B
= 50
-0.1
20
10
50
50
-0.05
V
CE
= -6V
-0.2
-0.5
-1
-2
-5
-10 -20
-50 -100
-0.2
-0.5
-1
-2
-5
-10 -20
-50 -100
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current (
Ι
)
Fig.5 DC current gain vs. collector
current (
ΙΙ
)
Fig.6 Collector-emitter saturation
voltage vs. collector current (
Ι
)
Rev.C
2
/
3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
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order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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