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SRAS20150C0

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 150V V(RRM), Silicon, TO-263AB, D2PAK-3/2
CategoryDiscrete semiconductor    diode   
File Size209KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

SRAS20150C0 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 20A, 150V V(RRM), Silicon, TO-263AB, D2PAK-3/2

SRAS20150C0 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionD2PAK-3/2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.02 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current330 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage150 V
Maximum reverse current100 µA
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationSINGLE
SRAS2020 thru SRAS20150
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Ideal for automated placement
- Guardring for overvoltage protection
- High surge current capability
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Schottky Barrier Rectifiers
MECHANICAL DATA
Case:
TO-263AB (D
2
PAK)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
As marked
Weight:
1.7 g (approximately)
TO-263AB (D
2
PAK)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 20 A
Maximum reverse current @ rated VR
T
J
=25
T
J
=100
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
0.57
0.5
I
R
R
θJC
T
J
T
STG
15
-
1.5
- 55 to +150
- 55 to +150
10
SRAS SRAS SRAS SRAS SRAS SRAS SRAS SRAS
2020
20
14
20
2030
30
21
30
2040
40
28
40
2050
50
35
50
20
330
0.70
0.92
0.1
-
5
O
2060
60
42
60
2090 20100 20150
90
63
90
100
70
100
150
105
150
Unit
V
V
V
A
A
1.02
V
mA
C/W
O
O
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C
C
Document Number: DS_D1310002
Version: K13
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