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SRAS860G

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size132KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric Compare View All

SRAS860G Overview

Rectifier Diode,

SRAS860G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Objectid110125311
Reach Compliance Codecompliant
ECCN codeEAR99
compound_id231995901
CREAT BY ART
SRAS820 - SRAS8150
8.0AMPS. Surface Mount Schottky Barrier Rectifiers
D
2
PAK
Pb
RoHS
COMPLIANCE
Features
UL Recognized File #E-326854
For surface mounted application
Ideal for automated pick & place
Low power loss, high efficiency
High current capability, low VF
High reliabbility
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
Guard-ring for transient protection
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
Case: D
2
PAK molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260℃/10 seconds/.25", (6.35mm) from case
Weight: 1.36 gram
Dimensions in inches and (millimeters)
Marking Diagram
SRAS8XX
G
Y
WW
= Specific Device Code
= Green Compound
= Year
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage (Note 1)
@ 8.0A
Maximum Reverse Current @ Rated VR
T
A
=25
T
A
=100℃
T
A
=125
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
SRAS SRAS SRAS SRAS SRAS SRAS SRAS
820
830
840
850
860
890
8100
20
30
40
50
60
90
100
14
20
21
30
28
40
35
50
8.0
150
0.55
0.70
0.1
0.95
42
60
63
90
70
100
SRAS
8150
150
105
150
Unit
V
V
V
A
A
V
I
R
C
j
R
θjC
T
J
T
STG
5
-
165
3
- 65 to + 150
- 65 to + 150
-
5
mA
pF
O
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
Note 1: Pulse Test with PW=300u sec, 1% Duty Cycle
C/W
O
O
C
C
Note 2: Measure at 1MHz and Applied Reverse Voltage of 4.0V D.C.
Version:F11

SRAS860G Related Products

SRAS860G SRAS890G SRAS8100G SRAS8150G SRAS820G
Description Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode,
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code compliant compliant compliant compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99

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