TISP3320F3D datasheet, PDF - EEWORLD Datasheet

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TISP3320F3D: DescriptionSilicon Surge Protector, 320V V(BO) Max, 4A, SOP-8; CategoryAnalog mixed-signal IC Trigger device; File Size602KB，12 Pages; ManufacturerBourns; Websitehttp://www.bourns.com

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TISP3320F3D Overview

Silicon Surge Protector, 320V V(BO) Max, 4A, SOP-8

TISP3320F3D Parametric

Parameter Name	Attribute value
Maker	Bourns
Parts packaging code	SOIC
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknown
Other features	UL RECOGNIZED
Maximum breakover voltage	320 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum off-state DC voltage	240 V
JESD-30 code	R-PDSO-G8
On-state non-repetitive peak current	4 A
Number of components	2
Number of terminals	8
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Trigger device type	SILICON SURGE PROTECTOR

TISP3320F3D Preview

TISP3240F3, TISP3260F3,

TISP3290F3,TISP3320F3,TISP3380F3

HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR

OVERVOLTAGE PROTECTORS

TISP3xxxF3 (HV) Overvoltage Protector Series

Ion-Implanted Breakdown Region

Precise and Stable Voltage

Low Voltage Overshoot under Surge

DEVICE

‘3240F3

‘3260F3

‘3290F3

‘3320F3

‘3380F3

DRM

180

200

220

240

270

(BO)

240

260

290

320

380

D Package (Top View)

NC - No internal connection

SL Package (Top View)

Planar Passivated Junctions

Low Off-State Current <10 µA

Rated for International Surge Wave Shapes

Waveshape

2/10

µs

8/20

µs

10/160

µs

10/700

µs

10/560

µs

10/1000

µs

Standard

GR-1089-CORE

IEC 61000-4-5

FCC Part 68

ITU-T K.20/21

FCC Part 68

GR-1089-CORE

TSP

175

120

MD1XAB

Device Symbol

.......................................UL Recognized Component

Description

These high-voltage dual bidirectional thyristor protectors

are designed to protect ground backed ringing central

office, access and customer premise equipment against

overvoltages caused by lightning and a.c. power

disturbances. Offered in five voltage variants to meet

battery and protection requirements, they are guaranteed

to suppress and withstand the listed international lightning

surges in both polarities. Overvoltages are initially clipped

by breakdown clamping until the voltage rises to the

breakover level, which causes the device to switch. The

high crowbar holding current prevents d.c. latchup as the

current subsides.

How To Order

Device

TISP3xxxF3

Package

D, Small-o utline

SL, Single-in-line

Carrier

Tap e And Reeled

Tube

Order As

TISP3xxxF3DR-S

TISP3xxxF3SL-S

SD3XAA

Terminals T, R and G correspond to the

alternative line designators of A, B and C

Insert xxx value corresponding to protection voltages of 240 through 380

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

MARCH 1994 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

Description (continued)

These monolithic protection devices are fabricated in ion implanted planar structures to ensure precise and matched breakover control

and are virtually transparent to the system in normal operation.

Absolute Maximum Ratings, T

= 25 °C (Unless Otherwise Noted)

Rating

‘3240F3

‘3260F3

‘3290F3

‘3320F3

‘3380F3

Symbol

Value

±180

±200

±220

±240

±270

350

175

120

PPSM

D Package

SL Package

TSM

/dt

stg

4.3

7.1

250

-65 to +150

A/µs

°C

Unit

Repetitive peak off-state voltage, 0

°C

< T

< 70

°C

DRM

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

1/2 (Gas tube differential transient, 1/2 voltage wave shape)

2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)

1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25

Ω

resistor)

8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)

10/160 (FCC Part 68, 10/160 voltage wave shape)

4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)

0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)

5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)

5/320 (FCC Part 68, 9/720 voltage wave shape, single)

10/560 (FCC Part 68, 10/560 voltage wave shape)

10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)

Non-repetitive peak on-state current, 0

°C

< T

< 70

°C

(see Notes 1 and 3)

50 Hz, 1 s

Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A

Junction temperature

Storage temperature range

NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.

2. Initially, the TISP

device m ust be in thermal equilibrium with 0 °C < T

<70 °C. The surge may be repeated after the TISP

device

returns to its initial conditions.

3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.

Electrical Characteristics for R and T Terminal Pair, T

= 25 °C (Unless Otherwise Noted)

Parameter

Repetitive peak off-

state current

Off-state current

Off-state capacitance

Test Conditions

±2V

DRM

, 0

°C

< T

< 70

°C

±50

f = 100 kHz, V

= 100 mV , V

= 0,

Third terminal voltage = -50 V to +50 V

(see Notes 4 and 5)

Min

Typ

Max

±10

D Package

SL Package

0.05

0.03

0.15

0.1

Unit

µA

DRM

off

NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is

connected to the guard terminal of the bridge.

5. Further details on capacitance are given in the Applications Information section.

MARCH 1994 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

Electrical Characteristics for T and G or R and G Terminals, T

= 25 °C (Unless Otherwise Noted)

Parameter

Repetitive peak off-

state current

Test Conditions

±V

DRM

, 0

°C

< T

< 70

°C

‘3240F3

‘3260F3

‘3290F3

‘3320F3

‘3380F3

‘3240F3

‘3260F3

‘3290F3

‘3320F3

‘3380F3

±0.1

±0.15

±5

±10

Min

Typ

Max

±10

±240

±260

±290

±320

±380

±267

±287

±317

±347

±407

±0.6

±3

Unit

µA

DRM

(BO)

Breakover voltage

dv/dt =

±250

V/ms, R

SOURCE

= 300

Ω

(BO)

Impulse breakover

voltage

dv/dt

≤

±1000

V/µs, Linear voltage ramp,

Maximum ramp value =

±500

SOURCE

= 50

Ω

dv/dt =

±250

V/ms, R

SOURCE

= 300

Ω

±5

A, t

= 100

µs

±5

A, di/dt = -/+30 mA/ms

Linear voltage ramp, Maximum ramp value < 0.85V

DRM

±50

f = 1 MHz, V

= 0.1 V r.m.s., V

= 0

f = 1 MHz, V

= 0.1 V r.m.s., V

= -5 V

f = 1 MHz, V

= 0.1 V r.m.s., V

= -50 V

(see Notes 5 and 6)

(BO)

dv/dt

off

Breakover current

On-state voltage

Holding current

Critical rate of rise of

off-state voltage

Off-state current

kV/µs

µA

Off-state capacitance

NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is

connected to the guard terminal of the bridge.

7. Further details on capacitance are given in the Applications Information section.

Thermal Characteristics

Parameter

Junction to free air thermal resistance

Test Conditions

tot

= 0.8 W, T

= 25

°C

5 cm

, FR4 PCB

D Package

SL Package

Min

Typ

Max

160

135

°C/W

Unit

MARCH 1994 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

Parameter Measurement Information

TSP

Quadrant I

Switching

Characteristic

TSM

(BR)M

-v

(BR)

(BO)

TSM

Quadrant III

Switching

Characteristic

TSP

-i

PMXXAA

(BO)

DRM

(BR)

DRM

(BR)M

DRM

(BO)

Figure 1. Voltage-Current Characteristics for any Terminal Pair

MARCH 1994 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP3xxxF3 (HV) Overvoltage Protector Series

Typical Characteristics - R and G or T and G Terminals

OFF-STATE CURRENT

JUNCTION TEMPERATURE

NORMALIZED BREAKDOWN VOLTAGES

JUNCTION TEMPERATURE

TC3HAI

100

TC3HAF

1.2

Normalized Breakdown Voltages

(BO)

= 50 V

0.1

= -50 V

0.01

1.1

(BR)M

1.0

(BR)

Normalized to V

(BR)

= 100

µA

and 25

°C

Positive Polarity

0.001

-25

100

125

150

- Junction Temperature - °C

0.9

-25

100

125

150

- Junction Temperature - °C

Figure 2.

Figure 3.

NORMALIZED BREAKDOWN VOLTAGES

JUNCTION TEMPERATURE

TC3HAJ

100

OFF-STATE CURRENT

ON-STATE VOLTAGE

TC3HAL

1.2

Normalized Breakdown Voltages

(BO)

1.1

(BR)M

- On-State Current - A

1.0

(BR)

Normalized to V

(BR)

= 100

µA

and 25

°C

Negative Polarity

0.9

-25

100

125

150

- Junction Temperature - °C

150 °C

25 °C

-40 °C

7 8 9 10

- On-State Voltage - V

Figure 4.

Figure 5.

MARCH 1994 - REVISED JANUARY 2007

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

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TISP3320F3D Related Products

	TISP3320F3D	TISP3290F3D	TISP3380F3D	TISP3240F3D	TISP3260F3D
Description	Silicon Surge Protector, 320V V(BO) Max, 4A, SOP-8	Silicon Surge Protector, 290V V(BO) Max, 4A, SOP-8	Silicon Surge Protector, 380V V(BO) Max, 4A, SOP-8	Silicon Surge Protector, 240V V(BO) Max, 4A, SOP-8	Silicon Surge Protector, 260V V(BO) Max, 4A, SOP-8
Maker	Bourns	Bourns	Bourns	Bourns	Bourns
Parts packaging code	SOIC	SOIC	SOIC	SOIC	SOIC
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Contacts	8	8	8	8	8
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Maximum breakover voltage	320 V	290 V	380 V	240 V	260 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Maximum off-state DC voltage	240 V	200 V	270 V	180 V	200 V
JESD-30 code	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
On-state non-repetitive peak current	4 A	4 A	4 A	4 A	4 A
Number of components	2	2	2	2	2
Number of terminals	8	8	8	8	8
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Trigger device type	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR
ECCN code	-	EAR99	-	EAR99	EAR99

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