BAS101; BAS101S
High-voltage switching diodes
Rev. 02 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted
Device (SMD) plastic package.
Table 1.
Product overview
Package
NXP
BAS101
BAS101S
SOT23
SOT23
JEITA
-
-
single
dual series
Configuration
Type number
1.2 Features
High switching speed: t
rr
≤
50 ns
Low leakage current
Repetitive peak reverse voltage:
V
RRM
≤
300 V
Low capacitance: C
d
≤
2 pF
Reverse voltage: V
R
≤
300 V
Small SMD plastic package
1.3 Applications
High-speed switching
High-voltage switching
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
F
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
forward current
reverse current
reverse voltage
reverse recovery time
[1]
Conditions
Min
-
Typ
-
-
-
-
Max
200
150
300
50
Unit
mA
nA
V
ns
V
R
= 250 V
-
-
-
When switched from I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA.
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
2. Pinning information
Table 3.
Pin
BAS101
1
2
3
anode
not connected
cathode
1
2
3
1
3
2
006aaa764
Pinning
Description
Simplified outline
Symbol
BAS101S
1
2
3
anode (diode 1)
cathode (diode 2)
cathode (diode 1),
anode (diode 2)
3
3
1
2
1
2
006aaa763
3. Ordering information
Table 4.
Ordering information
Package
Name
BAS101
BAS101S
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 5.
BAS101
BAS101S
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
*HQ
*HR
Type number
BAS101_BAS101S_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
2 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
repetitive peak reverse
voltage
reverse voltage
Conditions
Min
-
Max
300
600
300
600
200
100
1
9
Unit
V
V
V
V
mA
mA
A
A
series connection
series connection
-
-
-
-
-
-
[1]
forward current
series connection
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
T
j
= 25
°C
prior to surge
t
p
≤
1 ms;
δ ≤
0.25
square wave;
t
p
≤
1
μs
T
amb
≤
25
°C
-
[2]
-
-
−65
−65
250
150
+150
+150
mW
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
Per device
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
Min
-
Typ
-
Max
500
Unit
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BAS101_BAS101S_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
3 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per diode
V
F
I
R
C
d
t
rr
[1]
[2]
Conditions
I
F
= 100 mA
V
R
= 250 V
V
R
= 250 V; T
j
= 150
°C
V
R
= 0 V; f = 1 MHz
[2]
[1]
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
1.1
150
100
2
50
Unit
V
nA
μA
pF
ns
forward voltage
reverse current
diode capacitance
reverse recovery time
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
When switched from I
F
= 30 mA to I
R
= 30 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA.
BAS101_BAS101S_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
4 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
500
I
F
(mA)
400
mhc618
10
2
I
FSM
(A)
10
mbg703
300
200
1
100
(1) (2)
(3)
0
0
0.5
1
10
−1
V
F
(V)
1.5
1
10
10
2
10
3
t
p
(μs)
10
4
(1) T
amb
= 150
°C
(2) T
amb
= 75
°C
(3) T
amb
= 25
°C
Based on square wave currents
T
j
= 25
°C;
prior to surge
Fig 1.
Forward current as a function of forward
voltage; typical values
mhc619
Fig 2.
Non-repetitive peak forward current as a
function of pulse duration; maximum values
mhc621
10
2
I
R
(μA)
10
0.42
C
d
(pF)
0.38
1
0.34
10
−1
10
−2
0
40
80
120
160
200
T
j
(°C)
0.3
0
10
20
30
V
R
(V)
40
V
R
= 300 V
f = 1 MHz; T
amb
= 25
°C
Fig 3.
Reverse current as a function of junction
temperature; typical values
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
BAS101_BAS101S_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
5 of 11
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