ZVP2220B datasheet, PDF - EEWORLD Datasheet

ZVP2220B: DescriptionTRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,900MA I(D),TO-39; CategoryDiscrete semiconductor The transistor; File Size483KB，10 Pages; ManufacturerDiodes Incorporated

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ZVP2220B Overview

TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,900MA I(D),TO-39

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Diodes Incorporated
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	0.9 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	20 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

	ZVP2220B	ZVP2220L
Description	TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,900MA I(D),TO-39	TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,230MA I(D),TO-220
Is it Rohs certified?	incompatible	incompatible
Maker	Diodes Incorporated	Diodes Incorporated
Reach Compliance Code	unknown	unknown
Configuration	Single	Single
Maximum drain current (Abs) (ID)	0.9 A	0.23 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	20 W	20 W
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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