STPRF1605CT–STPRF1660CT
Vishay Lite–On Power Semiconductor
16A Super–Fast Glass Passivated Rectifiers
Features
D
D
D
D
Glass passivated die construction
Diffused junction
Super–fast switching for high efficiency
High current capability and low forward voltage
drop
D
Surge overload rating to 200A peak
D
Low reverse leakage current
D
Plastic material – UL Recognition flammability
classification 94V–0
95 9630
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
g
=Working peak reverse voltage
DC Blocking lt
=DC Bl ki voltage
Test
Conditions
Type
STPRF1605CT
STPRF1610CT
STPRF1615CT
STPRF1620CT
STPRF1630CT
STPRF1640CT
STPRF1650CT
STPRF1660CT
Symbol
V
RRM
=V
RWM
V
=V
R
Value
50
100
150
200
300
400
500
600
200
16
–65...+150
Unit
V
V
V
V
V
V
V
V
A
A
°
C
Peak forward surge current
Average forward current
T
C
=100
°
C
Junction and storage temperature range
I
FSM
I
FAV
T
j
=T
stg
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Test
Conditions
I
F
=8A
Type
STPRF1605CT–1620CT
STPRF1630CT–1640CT
STPRF1650CT–1660CT
Symbol Min
V
F
V
F
V
F
I
R
I
R
t
rr
t
rr
C
D
C
D
R
thJC
Typ
Max
0.95
1.3
1.5
5
500
35
50
85
60
3.1
Unit
V
V
V
m
A
m
A
ns
ns
pF
pF
K/W
T
C
=25
°
C
T
C
=100
°
C
Reverse recovery time I
F
=1A, I
R
=0.5A,
y
I
rr
=0.25A
Reverse current
Diode capacitance
Thermal resistance
junction to case
V
R
=4V, f=1MHz
STPRF1605CT–1620CT
STPRF1630CT–1660CT
STPRF1605CT–1640CT
STPRF1650CT–1660CT
Rev. A2, 24-Jun-98
1 (4)
STPRF1605CT–STPRF1660CT
Vishay Lite–On Power Semiconductor
Characteristics
(T
j
= 25
_
C unless otherwise specified)
I
FAV
– Average Forward Current ( A )
20
C
D
– Diode Capacitance ( pF )
400
T
j
= 25°C
f = 1 MHz
16
1605 – 1640
12
8
100
1650 – 1660
4
0
0
50
100
150
10
0.1
15456
1.0
10
100
15453
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
100
I
F
– Forward Current ( A )
Pulse Width = 300
µs
2% Duty Cycle
50V–200V
300V–
400V
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
100
I
R
– Reverse Current (
m
A )
10
10
T
j
= 100°C
1.0
T
j
= 75°C
500V–600V
1.0
0.1
T
j
= 25°C
0.1
0.2
15454
0.01
0.6
1.0
1.4
15457
V
F
– Forward Voltage ( V )
40
80
120
Percent of Rated Peak Reverse Voltage (%)
0
Figure 2. Typ. Forward Current vs. Forward Voltage
300
250
200
150
100
50
0
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
I
FSM
– Peak Forward Surge Current ( A )
8.3 ms Single Half–Sine–Wave
JEDEC method
1
10
Number of Cycles at 60 Hz
100
15455
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
2 (4)
Rev. A2, 24-Jun-98
STPRF1605CT–STPRF1660CT
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
