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BFS55A: DescriptionRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72,; CategoryDiscrete semiconductor The transistor; File Size43KB，1 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BFS55A Overview

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72,

BFS55A Parametric

Parameter Name	Attribute value
Maker	Infineon
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	4500 MHz

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Reach Compliance Code	compliant	unknown	compliant	compliant	compliant	compliant	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Number of terminals	4	2	4	4	3	3	4	4
Maximum operating temperature	175 °C	125 °C	150 °C	175 °C	150 °C	175 °C	175 °C	175 °C
Package form	CYLINDRICAL	SMT	DISK BUTTON	POST/STUD MOUNT	DISK BUTTON	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Maker	Infineon	-	Infineon	Infineon	Infineon	Infineon	Infineon	Infineon
Maximum collector current (IC)	0.05 A	-	0.2 A	0.35 A	0.03 A	0.025 A	0.1 A	0.1 A
Collector-emitter maximum voltage	15 V	-	20 V	20 V	15 V	15 V	20 V	20 V
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND	-	-	-	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND
JESD-30 code	O-MBCY-W4	-	O-CRDB-F4	O-CRPM-F4	O-PRDB-F3	O-PBCY-T3	O-MBCY-W4	O-MBCY-W4
Number of components	1	-	1	1	1	1	1	1
Package body material	METAL	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY	METAL	METAL
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Polarity/channel type	NPN	-	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.25 W	-	2.3 W	4 W	0.2 W	0.5 W	0.37 W	0.37 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	-	YES	NO	YES	NO	NO	NO
Terminal form	WIRE	-	FLAT	FLAT	FLAT	THROUGH-HOLE	WIRE	WIRE
Terminal location	BOTTOM	-	RADIAL	RADIAL	RADIAL	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	4500 MHz	-	3300 MHz	3300 MHz	5800 MHz	2000 MHz	900 MHz	1100 MHz

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