Provisional Data Sheet No. PD-9.1395
REPETETIVE AVALANCHE AND dv/dt RATED
HEXFET
®
TRANSISTOR
IRHM9230
P-CHANNEL
RAD HARD
Product Summary
Part Number
IRHM9230
BV
DSS
-200V
R
DS(on)
0.8Ω
I
D
-6.5A
-200 Volt, 0.8Ω , RAD HARD HEXFET
Ω
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 10
5
Rads (Si). Under
identical
pre- and post-radia-
tion test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain
identical
electrical specifications
up to 1 x 10
5
Rads (Si) total dose. No compensation in gate
drive circuitry is required. These devices are also capable
of surviving transient ionization pulses as high as 1 x 10
12
Rads (Si)/Sec, and return to normal operation within a few
microseconds. Single Event Effect (SEE) testing of Inter-
national Rectifier P-Channel RAD HARD HEXFETs has
demonstrated virtual immunity to SEE failure. Since the
P-Channel RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can ex-
pect the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature all
of the well-established advantages of MOSFETs, such as
voltage control,very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and weap-
ons environments.
Features:
s
s
s
s
s
s
s
s
s
s
s
s
Radiation Hardened up to 1 x 10
5
Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
s
Electrically Isolated
Absolute Maximum Ratings
Parameter
I D @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Notes: See page 4
Pre-Radiation
IRHM9230
-6.5
-4.1
-26
75
0.2
±20
330
-6.5
7.5
-5.0
-55 to 150
o
C
Units
A
W
W/K
V
mJ
A
mJ
V/ns
300 (0.063 in. (1 .6mm) from case for 10s)
9.3 (typical)
g
IRHM9230 Device
Pre-Radiation
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min.
-200
—
—
—
-2.0
2.2
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
—
-0.10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
—
—
V
V/°C
Test Conditions
VGS = 0V, I D = -1.0 mA
Reference to 25°C, ID = -1.0 mA
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
0.8
VGS = -12V, I D = -4.1A
0.92
Ω
VGS = -12V, I D = -6.5A
-4.0
V
VDS = VGS, ID = -1.0 mA
— S( )
VDS > -15V, I DS = -6.5A
-25
µA
VDS = 0.8 x Max. Rating,VGS = 0V
-250
VDS = 0.8 x Max. Rating
VGS = 0V, TJ = 125°C
-100
VGS = -20V
nA
100
VGS = 20V
35
VGS = -12V, I D = -6.5A
nC
10
VDS = Max. Rating x 0.5
25
50
VDD = -100V, ID = -6.5A, RG = 2.35Ω
90
ns
90
90
Measured from the
Modified MOSFET
—
nH
LS
Internal Source Inductance
—
15
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1100
310
55
—
—
—
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
I SM
VSD
t rr
QRR
t on
Continuous Source Current
(Body Diode)
Pulse Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
—
—
—
—
-6.5
-26
A
—
—
-5.0
V
T
j
= 25°C, IS = -6.5A, VGS = 0V
—
—
400
ns
Tj = 25°C, IF = -6.5A, di/dt
≤
-100 A/µs
—
—
3.0
µC
VDD
≤
-50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min. Typ. Max. Units
—
—
—
30
1.67
K/W
—
Notes: See page 4
Ω
drain lead, 6mm (0.25
in.) from package to
center of die.
symbol showing the
internal inductances.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = -25V
f = 1.0 MHz
Test Conditions
Modified MOSFET symbol
showing the integral Reverse
p-n junction rectifier.
Test Conditions
IRHM9230 Device
Radiation Performance of P-Channel Rad
Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The
hardness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test method
1019. International Rectifier has imposed a standard
gate voltage of -12 volts per note 6 and a VDSS bias
condition equal to 80% of the device rated voltage per
note 7. Pre- and post-radiation limits of the devices
irradiated to 1 x 10
5
Rads (Si) are identical and are
presented in Table 1. The values in Table 1 will be met
for either of the two low dose rate test circuits that are
used.
Radiation Characteristics
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10
5
Rads (Si), no change in limits are specified in DC
parameters.
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10
12
Rads
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as stated
in MIL-PRF-19500 Group D. International Rectifier P-
Channel radiation hardened HEXFETs have been
characterized in heavy ion Single Event Effects
environment and the results are shown in Table
3.
Table 1. Low Dose Rate
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
IRHM9230
100K Rads (Si)
min.
-200
-2.0
—
—
—
—
—
max.
—
-4.0
-100
100
-25
0.8
-5.0
Units
V
nA
µA
Ω
V
Test Conditions
V
GS
= 0V, I
D
= -1.0 mA
V
GS
= V
DS
, I
D
= -1.0 mA
V
GS
= -20V
V
GS
= 20V
V
DS
= 0.8 x Max Rating, V
GS
= 0V
V
GS
= -12V, I
D
= -4.1A
T
C
= 25°C, I
S
= -6.5A,V
GS
= 0V
Table 2. High Dose Rate
Parameter
VDSS
IPP
di/dt
L1
Drain-to-Source Voltage
10
11
Rads (Si)/sec10
12
Rads (Si)/sec
—
—
—
1
—
-160
—
—
-160
—
—
Min. Typ Max. Min.Typ. Max. Units
V
-100 —
-800 —
—
—
— -100
— -160
20 —
Test Conditions
Applied drain-to-source voltage
during gamma-dot
A
Peak radiation induced photo-current
A/µsec Rate of rise of photo-current
µH
Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter
BV DSS
Typ.
-200
Units
V
Ion
Ni
LET (Si)
(MeV/mg/cm
2
)
28
Fluence
(ions/cm
2
)
1 x 10
5
Range
(µm)
~41
V
DS
Bias
(V)
-200
V
GS
Bias
(V)
5
IRHM9230 Device
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = -50V, Starting TJ = 25°C,
E
AS
= [0.5 * L * (I
L2
) * [BVDSS/(BVDSS-VDD)]
Peak IL = -6.5A, VGS = -12V, 25
≤
R
G
≤
200
Ω
ISD
≤
-6.5A, di/dt
≤
-140 A/µs,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG = 2.35Ω
Pulse width
≤
300
µs;
Duty Cycle
≤
2%
Radiation Characteristics
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019.
This
test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process characterized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
K/W = °C/W
W/K = W/°C
Case Outline and Dimensions
Optional leadforms for outline TO-254
LEGEND
1 DRAIN
2 SOURCE
3 GATE
LEGEND
1 DRAIN
2 SOURCE
3 GATE
NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982
2 ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES)
NOTES:
1 DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M-1982
2 ALL DIMENSIONS ARE SHOWN IN
MILLIMETERS (INCHES)
3 LEADFORM IS AVAILABLE IN EITHER
ORIENTATION:
Example: 3.1 IRHM7160D
3.2 IRHM7160U
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and (Inches)
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium oxide
packages shall not be placed in acids that will produce fumes
containing beryllium.
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
171 (K&H Bldg.),30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/96
京公网安备 11010802033920号
EEWORLD
