BLW96 datasheet, PDF - EEWORLD Datasheet

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BLW96: DescriptionRF Power Bipolar Transistor, High Frequency Band, Silicon, NPN, FM-4; CategoryDiscrete semiconductor The transistor; File Size15KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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RF Power Bipolar Transistor, High Frequency Band, Silicon, NPN, FM-4

BLW96 Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	FLANGE MOUNT, O-CRFM-F4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	12 A
Collector-emitter maximum voltage	55 V
Configuration	Single
Minimum DC current gain (hFE)	15
highest frequency band	HIGH FREQUENCY BAND
JESD-30 code	O-CRFM-F4
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	340 W
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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BLW96

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI BLW96

is Designed for

High Linearity Class A, AB HF Power

Amplifier Applications up to 30 MHz.

PACKAGE STYLE .500 4L FLG

.112x45°

A

FULL R

L

FEATURES:

•

P

G

= 14 dB Typical at 200 W/28 MHz

•

IMD

3

= -32 dBc Typ. at 220 W

(PEP)

•

Omnigold™

Metalization System

C

B

E

C

Ø.125 NOM.

B

E

H

D

G

F

E

MAXIMUM RATINGS

I

C

V

EES

V

CEO

V

EBO

P

DISS

T

J

T

STG

θ

JC

O

I J

K

12 A

DIM

MINIMUM

inches / mm

MAXIMUM

inches / mm

110 V

55 V

4.0 V

320 W @ T

C

= 25 C

-65 C to +200 C

-65 C to +150 C

0.7 C/W

O

A

B

C

D

E

F

G

H

I

J

K

L

.220 / 5.59

.125 / 3.18

.245 / 6.22

.720 / 18.28

.125 / 3.18

.970 / 24.64

.495 / 12.57

.003 / 0.08

.090 / 2.29

.150 / 3.81

.230 / 5.84

.255 / 6.48

.7.30 / 18.54

.980 / 24.89

.505 / 12.83

.007 / 0.18

.110 / 2.79

.175 / 4.45

.280 / 7.11

.980 / 24.89

1.050 / 26.67

ORDER CODE: ASI10826

O

CHARACTERISTICS

SYMBOL

BV

CES

BV

CEO

BV

EBO

I

CES

h

FE

V

CE

C

G

P

IMD

3

η

C

I

C

= 50 mA

T

C

= 25 C

NONETEST

CONDITIONS

I

C

= 200 mA

I

E

= 20 mA

V

CE

= 55 V

V

CE

= 5.0 V

I

C

= 20 A

V

CB

= 50 V

I

C

= 7.0 A

I

C

= 4.0 A

f = 1.0 MHz

MINIMUM TYPICAL MAXIMUM

110

55

4.0

10

15

50

1.9

280

13.5

-30

UNITS

V

mA

---

V

pF

dB

dBc

%

V

CE

= 50 V

I

CQ

=100 mA

P

OUT

= 200 W

(PEP)

40

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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