BLF888D; BLF888DS
UHF power LDMOS transistor
Rev. 1 — 5 March 2014
Objective data sheet
1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The
excellent ruggedness of this device makes it ideal for digital and analog transmitter
applications.
Table 1.
Application information
RF performance at V
DS
= 50 V in an ultra wide Doherty application.
Test signal
DVB-T (8k OFDM)
[1]
[2]
[3]
f
(MHz)
470 to 806
P
L(AV)
(W)
115 to 134
[2]
G
p
(dB)
17
D
(%)
40 to 48
[2]
IMD
shldr
(dBc)
38
to
44
[3]
PAR
(dB)
8
[1]
PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
Depending on selected channel.
Depending on exciter used.
1.2 Features and benefits
High efficiency
High power gain
Excellent ruggedness (VSWR
40 : 1 through all phases)
Excellent thermal stability
Integrated ESD protection
One Doherty design covers the full bandwidth from 470 MHz to 806 MHz
Internal input matching for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Broadcast transmitter applications in the UHF band
Digital broadcasting
NXP Semiconductors
BLF888D; BLF888DS
UHF power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain1 (peak)
drain2 (main)
gate1 (peak)
gate2 (main)
source
[1]
Simplified outline
Graphic symbol
BLF888D (SOT539A)
BLF888DS (SOT539B)
1
2
3
4
5
drain1 (peak)
drain2 (main)
gate1 (peak)
gate2 (main)
source
[1]
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Name Description
BLF888D
BLF888DS
-
-
earless flanged balanced ceramic package; 4 leads
Version
SOT539B
Type number Package
flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
104
+11
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
BLF888D_BLF888DS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Objective data sheet
Rev. 1 — 5 March 2014
2 of 10
NXP Semiconductors
BLF888D; BLF888DS
UHF power LDMOS transistor
5. Thermal characteristics
Table 5.
R
th(j-c)
Thermal characteristics
Conditions
[1]
Symbol Parameter
Typ Unit
0.27 K/W
0.16 K/W
thermal resistance from junction T
case
= 75
C;
V
DS
= 50 V;
to case
I
DS
= 2.7 A (main); I
DS
= 0 A (peak)
T
case
= 90
C;
V
DS
= 50 V;
P
L
= 115 W; PAR = 8 dB
[2]
[1]
[2]
Measured under DC test conditions, with peak section off.
Measured in an ultra wide Doherty application, using a DVB-T (8k OFDM) signal, PAR (of output signal) at
0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
Conditions
V
DS
= 10 V; I
D
= 240 mA
V
GS
= 0 V; V
DS
= 50 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 10 V; V
DS
= 0 V
Min
104
1.4
-
-
-
-
Typ
-
1.9
37
-
120
Max
-
2.4
-
280
-
Unit
V
V
A
A
nA
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.4 mA
0.061 2.8
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 8.5 A
Table 7.
AC characteristics
T
j
= 25
C; per section unless otherwise specified.
Symbol Parameter
C
iss
C
oss
C
rss
input capacitance
output capacitance
Conditions
Min Typ
210
70
1.3
Max Unit
-
-
-
pF
pF
pF
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz -
V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz -
reverse transfer capacitance V
GS
= 0 V; V
DS
= 50 V; f = 1 MHz -
Table 8.
RF characteristics
V
DS
= 50 V; I
Dq
= 1.3 A; T
case
= 25
C unless otherwise specified; in a class-AB production test
circuit.
Symbol Parameter
Test signal: 2-tone CW
P
L(AV)
G
p
D
IMD3
average output power
power gain
drain efficiency
third-order intermodulation
distortion
output power at 3 dB gain
compression
f
1
= 860 MHz; f
2
= 860.1 MHz
f
1
= 860 MHz; f
2
= 860.1 MHz
f
1
= 860 MHz; f
2
= 860.1 MHz
f
1
= 860 MHz; f
2
= 860.1 MHz
-
19
43
-
250
21
45
32
-
-
-
29
W
dB
%
dBc
Conditions
Min Typ
Max Unit
Test signal: pulsed CW
P
L(3dB)
f = 860 MHz; t
p
= 100
s;
= 10 %
540
580
-
dB
BLF888D_BLF888DS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Objective data sheet
Rev. 1 — 5 March 2014
3 of 10
NXP Semiconductors
BLF888D; BLF888DS
UHF power LDMOS transistor
7. Test information
7.1 Ruggedness in Doherty operation
The BLF888D and BLF888DS are capable of withstanding a load mismatch
corresponding to VSWR
40 : 1 through all phases under the following conditions:
V
DS
= 50 V; f = 810 MHz at rated load power.
BLF888D_BLF888DS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Objective data sheet
Rev. 1 — 5 March 2014
4 of 10
NXP Semiconductors
BLF888D; BLF888DS
UHF power LDMOS transistor
8. Package outline
Fig 1.
Package outline SOT539A
BLF888D_BLF888DS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Objective data sheet
Rev. 1 — 5 March 2014
5 of 10
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