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CMM1331-SM

Description
Narrow Band Medium Power Amplifier, 12700MHz Min, 13500MHz Max, 6 X 6 MM, SURFACE MOUNT PACKAGE-10
CategoryWireless rf/communication    Radio frequency and microwave   
File Size372KB,2 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric View All

CMM1331-SM Overview

Narrow Band Medium Power Amplifier, 12700MHz Min, 13500MHz Max, 6 X 6 MM, SURFACE MOUNT PACKAGE-10

CMM1331-SM Parametric

Parameter NameAttribute value
MakerMACOM
Reach Compliance Codeunknown
Characteristic impedance50 Ω
structureCOMPONENT
Gain29 dB
Maximum input power (CW)7 dBm
Maximum operating frequency13500 MHz
Minimum operating frequency12700 MHz
Maximum operating temperature75 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesNARROW BAND MEDIUM POWER
CMM1331-SM
Advanced Product Specifications
October 2003
(1 of 2)
12.70 to 13.50 GHz
1.5 Watt Power Amplifier
Pin Functional Diagram
CMM1331-SM
Features
32.0 dBm
(Typ.)
Saturated Output Power
32.0 dB
(Typ.)
Linear Gain
Fully Matched
Unconditionally Stable
Low-Cost Surface Mount Package
Optimum Thermal Dissipation
Applications
Ku-Band VSAT Transmit Subsystems
Vdd 1
GROUND 2
RF IN 3
GROUND 4
Vgg 5
10 Vdd
9 GROUND
8 RF OUT
7 GROUND
6 Vgg
Description
The CMM1331-SM is a four-stage pHEMT GaAs
MMIC power amplifier that is ideally suited for transmit
subsystems designed for Ku-Band VSAT applications. The
CMM1331-SM provides 32.0 dB linear gain and delivers
1.5 watts of output power at saturation operating from
12.70 to 13.50 GHz frequency.
The unconditional stability and internal matching
provides for reduction of external components making this
product a simple and low-cost solution. The low-cost, 6mm x
6mm x 1.6mm surface mount package offers the same excel-
lent RF and thermal properties as a typical flange package.
Electrical Characteristics
(T = +25°C, Vdd = 7V, Idq = 770mA)
Parameter
Condition
Min
Typ
Max
Units
Frequency Range
Output Power
Saturated Output Power
Output Power Variation
Linear Gain
Linear Gain Variation
Third Order Intercept Point
Input Reflection Coefficient
Output Reflection Coefficient
Gate Supply Voltage
Drain Current
Power Added Efficiency
@ 1dB compression
Pout at Pin = 5.0 dBm
Over operating frequency
Over operating frequency
12.70
30.0
31.0
29.0
13.50
31.0
32.0
1.0
32.0
36.0
-10.0
-7.0
-0.9
900
26
1.5
35.0
2.0
Idq = 770 mA
At Saturation
At Saturation
-1.1
22
-0.7
980
GHz
dBm
dBm
dBm
dB
dB
dBm
dB
dB
Volt
mA
%
Electrical Specifications
(TA = -40°C to +75°C)
Parameter
Condition
Min
Typ
Max
Units
Saturated Output Power
Linear Gain
Stability
Variation from Room Temperature
Variation from Room Temperature
-0.5
-2.5
3.5
Unconditionally stable
dBm
dB
Maximum Ratings
(TA = -40°C to +75°C) Operation outside these limits can cause permanent damage.
Parameter
Typ
Units
Parameter
Typ
Units
Drain Voltage (+Vdd)
Gate Voltage (Vgg)
Quiescent Current (Idq)
Gate Current (Ig)
3236 Scott Boulevard
8.5
-3.0
1000
5
Volts
Volts
mA
mA
RF Input Power (Pin)
Dissipated Power (Pdiss)
Storage Temperature
Operating Backside Temperature
Phone: (408) 986-5060
7.0
7.2
-50 to +150
-40 to +75
dBm
Watts
°C
°C
Santa Clara, California 95054
Fax: (408) 986-5095

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