TTS3816B4E-6D datasheet, PDF - EEWORLD Datasheet

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TTS3816B4E-6D: Description2M x 16Bit x 4 Banks synchronous DRAM; File Size242KB，8 Pages; ManufacturerETC

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2M x 16Bit x 4 Banks synchronous DRAM

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2M x 16Bit x 4 Banks synchronous DRAM

TTS3816B4E

GENERAL DESCRIPTION

The TTS3816B4E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 8 x 1,048,576 words by 16 bits,

fabricated with M’tec high performance CMOS technology. Synchronous design allows precise cycle control with the use of

system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and

programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system

applications.

FEATURES

•

JEDEC standard 3.3V power supply

• LVTTL compatible with multiplexed address

• Four-banks operation

• MRS cycle with address key programs

-. CAS latency (2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

•

All inputs are sampled at the positive going edge of the system clock.

• Burst read single-bit write operation

• DQM for masking

• Auto & self refresh

• 64ms refresh period (4K cycle)

ORDERING INFORMATION

Part No.

TTS3816B4E-7

TTS3816B4E-6

TTS3816B4E-6A

TTS3816B4E-6B

TTS3816B4E-6C

TTS3816B4E-6D

TTS3816B4E-6E

Max Freq.

100MHz 2-2-2

133MHz 3-3-3

100MHz 2-3-3

133MHz 2-3-2

133MHz 2-2-2

150MHz 3-3-3

166MHz 3-3-3

LVTTL

TSOP(II)

Interface

Package

Revision_1.1

TwinMOS Technologies Inc.

Sep. 2000

TTS3816B4E-6D Related Products

	TTS3816B4E-6D	TTS3816B4E-7	TTS3816B4E-6B	TTS3816B4E-6	TTS3816B4E-6E	TTS3816B4E-6C	TTS3816B4E-6A	TTS3816B4E
Description	2M x 16Bit x 4 Banks synchronous DRAM	2M x 16Bit x 4 Banks synchronous DRAM	2M x 16Bit x 4 Banks synchronous DRAM	2M x 16Bit x 4 Banks synchronous DRAM	2M x 16Bit x 4 Banks synchronous DRAM	2M x 16Bit x 4 Banks synchronous DRAM	2M x 16Bit x 4 Banks synchronous DRAM	2M x 16Bit x 4 Banks synchronous DRAM

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