SST39VF400A-70-4I-M1QE datasheet, PDF

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SST39VF400A-70-4I-M1QE: DescriptionFlash, 256KX16, 70ns, PBGA48, 4 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, MO-207C2B-4, WFBGA-48; Categorystorage storage; File Size780KB，30 Pages; ManufacturerSilicon Laboratories Inc; Environmental Compliance

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SST39VF400A-70-4I-M1QE Overview

Flash, 256KX16, 70ns, PBGA48, 4 X 6 MM, 0.50 MM PITCH, ROHS COMPLIANT, MO-207C2B-4, WFBGA-48

SST39VF400A-70-4I-M1QE Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Silicon Laboratories Inc
Parts packaging code	DSBGA
package instruction	VFBGA, BGA48,6X11,20
Contacts	48
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	70 ns
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PBGA-B48
JESD-609 code	e1
length	6 mm
memory density	4194304 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of departments/size	128
Number of terminals	48
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Encapsulate equivalent code	BGA48,6X11,20
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3/3.3 V
Programming voltage	2.7 V
Certification status	Not Qualified
Maximum seat height	0.73 mm
Department size	2K
Maximum standby current	0.00002 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.5 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
switch bit	YES
type	NOR TYPE
width	4 mm

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2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

SST39LF200A / SST39LF400A / SST39LF800A

SST39VF200A / SST39VF400A / SST39VF800A

SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories

Data Sheet

FEATURES:

• Organized as 128K x16 / 256K x16 / 512K x16

• Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF200A/400A/800A

– 2.7-3.6V for SST39VF200A/400A/800A

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

– Active Current: 20 mA (typical)

– Standby Current: 3 µA (typical)

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Block-Erase Capability

– Uniform 32 KWord blocks

• Fast Read Access Time

– 45 and 55 ns for SST39LF200A/400A

– 55 ns for SST39LF800A

– 70 and 90 ns for SST39VF200A/400A/800A

• Latched Address and Data

• Fast Erase and Word-Program

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39LF/VF200A

4 seconds (typical) for SST39LF/VF400A

8 seconds (typical) for SST39LF/VF800A

• Automatic Write Timing

– Internal V

Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

PRODUCT DESCRIPTION

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A devices are 128K x16 / 256K x16 / 512K x16 CMOS

Multi-Purpose Flash (MPF) manufactured with SST’s pro-

prietary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST39LF200A/400A/800A

write (Program or Erase) with a 3.0-3.6V power supply. The

SST39VF200A/400A/800A write (Program or Erase) with a

2.7-3.6V power supply. These devices conform to JEDEC

standard pinouts for x16 memories.

Featuring high performance Word-Program, the

SST39LF200A/400A/800A and SST39VF200A/400A/

800A devices provide a typical Word-Program time of 14

µsec. The devices use Toggle Bit or Data# Polling to detect

the completion of the Program or Erase operation. To pro-

tect against inadvertent write, they have on-chip hardware

and software data protection schemes. Designed, manu-

factured, and tested for a wide spectrum of applications,

these devices are offered with a guaranteed endurance of

10,000 cycles. Data retention is rated at greater than 100

years.

The SST39LF200A/400A/800A and SST39VF200A/400A/

800A devices are suited for applications that require conve-

nient and economical updating of program, configuration,

or data memory. For all system applications, they signifi-

cantly improve performance and reliability, while lowering

power consumption. They inherently use less energy dur-

ing Erase and Program than alternative flash technologies.

When programming a flash device, the total energy con-

sumed is a function of the applied voltage, current, and

time of application. Since for any given voltage range, the

SuperFlash technology uses less current to program and

has a shorter erase time, the total energy consumed during

any Erase or Program operation is less than alternative

flash technologies. These devices also improve flexibility

while lowering the cost for program, data, and configuration

storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet surface mount requirements, the SST39LF200A/

400A/800A and SST39VF200A/400A/800A are offered in

both 48-lead TSOP packages and 48-ball TFBGA pack-

ages. See Figures 1 and 2 for pinouts.

S71117-04-000 2/02

360

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

Multi-Purpose Flash and MPF are trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

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