2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
Performance Advantages
•
50% real estate reduction over competition
•
On State Dissipation is 1.5 to 2 times less than competition
•
Switching Characteristics - (ton) - up to 10 times faster
•
Can handle 3 times the surge as competition for the same physical area
•
Custom designs in 3-4 weeks (competition does not offer custom arrangements)
Features
•
•
•
•
•
•
Monolithic Flip Chip Construction, all contacts on one side
Available with solderable surface
Common Anode/Cathode available
Available in 2, 3, 4, 5, 6, 8 element arrays (see outlines below)
Available in 5-8.5 Volt versions
Power Rating is 50 Joules at 37°
C
•
Also available in TVS (TVSMEDA Series)
PRODUCT
CAPABILITY
SHEET
Monolithic Flip Chip
Thyristor Surge
Protection Device
Array
for Implantable
Applications
Proposed Maximum Ratings @ 37°
C-Body Temperature (unless otherwise specified)
Part Number
V
DRM
Volts
MAX
TSPDMEDA001-5
TSPDMEDA001-7.5
TSPDMEDA001-8.5
5
7.5
8.5
V
T
V
T
I
TSM
I
R
t
on
V
C
C
O
@1 A @8 A
@ VWM
1kV/us @ 50Ω @ 0V
Volts Volts mA mA Volts Volts Amps
nA
nsec
Volts
pF
MIN MAX MAX MIN MAX MAX MAX
MAX
MAX
MAX
MAX
6
8
9
8
12
12
20
20
20
1
1
1
3
3
3
6
6
6
30
30
30
100
100
100
500
500
500
10
15
15
100
100
100
V
Z
V
BO
I
BO
I
H
Monolithic Flip Chip Configurations
(in development)
2 mm
Max
Elementary
Cell
Schematic
Common
Cathode
Common
Anode
These Monolithic Arrays will feature
multiple devices on one chip with all
contacts on one surface. The
surfaces are available with a
solderable metal contact.
For more information on these
devices contact Microsemi's Santa
Ana division for custom
configurations and designs.
2.5 mm
Max
Input
2 mm
Max
MSC0988.PDF
5 mm
Max
Analogue and Mixed Signal
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