DSEC59-06BC datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> DSEC59-06BC

Preview

DSEC59-06BC: DescriptionRectifier Diode, 1 Phase, 2 Element, 30A, 600V V(RRM), Silicon, ISOPLUS220, 3 PIN; CategoryDiscrete semiconductor diode; File Size526KB，2 Pages; ManufacturerIXYS; Environmental Compliance

Download Datasheet Parametric View All

DSEC59-06BC Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	DSEC59-06BC	-	-	View	Buy Now

DSEC59-06BC Overview

Rectifier Diode, 1 Phase, 2 Element, 30A, 600V V(RRM), Silicon, ISOPLUS220, 3 PIN

DSEC59-06BC Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IXYS
package instruction	ISOPLUS220, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	FREE WHEELING DIODE, SNUBBER DIODE
application	SOFT RECOVERY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.56 V
JESD-30 code	R-PSIP-T3
JESD-609 code	e1
Maximum non-repetitive peak forward current	200 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-40 °C
Maximum output current	30 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
Maximum reverse recovery time	0.03 µs
surface mount	NO
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

Preview

Download Datasheet

View All

HiPerFRED

TM

Epitaxial Diode

ISOPLUS220

TM

Electrically Isolated Back Surface

DSEA

I

FAV

V

RRM

t

rr

DSEA 59-06BC

DSEC 59-06BC

= 2x30 A

= 600 V

= 35 ns

Preliminary Data Sheet

V

RSM

V

600

V

RRM

V

600

DSEA 59-06BC

DSEC 59-06BC

1

2

3

2

3

Type

1

DSEC

2

3

ISOPLUS220

TM

E153432

Symbol

I

FRMS

I

FAVM

I

FSM

E

AS

I

AR

T

VJ

T

VJM

T

stg

T

L

P

tot

V

ISOL

F

C

Weight

Symbol

I

R

V

F

R

thJC

R

thCH

t

rr

I

RM

Conditions

Lead current limit

T

C

= 105°C; rectangular, d = 0.5

T

VJ

= 45°C; t

p

= 10 ms (50 Hz), sine

T

VJ

= 25°C; non-repetitive

I

AS

= 1.3 A; L = 180 µH

V

A

= 1.5·V

R

typical; f = 10 kHz; repetitive

Maximum Ratings

45

30

200

0.2

0.1

-40...+175

175

-40...+150

A

mJ

A

°C

W

V~

g

Features

Isolated back surface*

1.6 mm (0.063 in) from case for 10 s

T

C

= 25°C

50/60 Hz RMS; I

ISOL

≤

1 mA

Mounting force

typical

Conditions

T

VJ

= 25°C

T

VJ

= 150°C

I

F

= 30 A;

V

R

= V

RRM

V

R

= V

RRM

T

VJ

= 150°C

T

VJ

= 25°C

260

136

2500

2

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Low cathode to tab capacitance (<15pF)

Planar passivated chips

Very short recovery time

Extremely low switching losses

Low I

RM

-values

Soft recovery behaviour

Epoxy meets UL 94V-0

Applications

Antiparallel diode for high frequency

switching devices

Antisaturation diode

Snubber diode

Free wheeling diode in converters

and motor control circuits

Rectifiers in switch mode power

supplies (SMPS)

Inductive heating

Uninterruptible power supplies (UPS)

Ultrasonic cleaners and welders

Advantages

Avalanche voltage rated for reliable

operation

Soft reverse recovery for low EMI/RFI

Low I

RM

reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating

switch

See DSEP 29-06B data sheet for

characteristic curves

11...65 / 2.5...15 N / lb

Characteristic Values

typ.

max.

250

2

1.56

2.51

1.1

0.6

µA

mA

V

K/W

ns

A

I

F

= 1 A; -di/dt = 200 A/µs;

V

R

= 30 V; T

VJ

= 25°C

V

R

= 100 V;

T

VJ

= 100°C

I

F

= 50 A; -di

F

/dt = 100 A/µs

30

4

Notes: Data given for T

VJ

= 25

O

C and per diode unless otherwise specified

Average current per diode may be limited by center lead RMS current limit when

both diodes are conducting.

Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %

Pulse test: pulse Width = 300

µs,

Duty Cycle < 2.0 %

IXYS reserves the right to change limits, test conditions and dimensions.

DS98817A(07/03)

Recommended Resources

Simple and practical high-power thyristor trigger circuit diagram

Circuit example circuit diagram (10A, 15V)

SX-6 human body sensor switch

Trigger driven thyristor flash circuit

direct coupled amplifier circuit

810E computer motherboard circuit diagram_08

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components