DSEP12-12AZ
HiPerFRED
V
RRM
I
FAV
t
rr
=
=
=
1200 V
12 A
40 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP12-12AZ
Backside: cathode
1
3
4
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
TO-263 (D2Pak-HV)
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131029a
© 2013 IXYS all rights reserved
DSEP12-12AZ
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
1.03
46
1.6
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 600 V f = 1 MHz
I
F
=
15 A; V
R
= 600 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 100°C
T
VJ
= 25 °C
T
VJ
= 100°C
-di
F
/dt = 200 A/µs
5
6
9
40
140
95
90
V
mΩ
K/W
K/W
W
A
pF
A
A
ns
ns
min.
typ.
max.
1200
1200
100
0.5
2.62
3.19
1.87
2.56
12
Unit
V
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 1200 V
V
R
= 1200 V
I
F
=
I
F
=
I
F
=
I
F
=
15 A
30 A
15 A
30 A
forward voltage drop
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 135°C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131029a
© 2013 IXYS all rights reserved
DSEP12-12AZ
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
d
Spp/App
d
Spb/Apb
mounting force with clip
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
TO-263 (D2Pak-HV)
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
35
175
150
150
Unit
A
°C
°C
°C
g
N
mm
mm
1.5
20
4.2
4.7
60
Product Marking
XXXXXXXXX
Part No.
Logo
Assembly Line
Date Code
Assembly Code
IXYS
Zyyww
000000
Ordering
Standard
Part Number
DSEP12-12AZ
Marking on Product
DSEP12-12AZ
Delivery Mode
Tape & Reel
Quantity
800
Code No.
515345
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
1.03
43
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131029a
© 2013 IXYS all rights reserved
DSEP12-12AZ
Outlines TO-263 (D2Pak-HV)
Dim.
W
E
L1
c2
A
Supplier
Option
D
A1
1
3
4
e1
2x e
L
c
2x b2
10.92
(0.430)
2x b
E1
D2
A2
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
W
mm (Inches)
Millimeter
Inches
min
max
min
max
4.06
4.83
0.160 0.190
typ. 0.10
typ. 0.004
2.41
0.095
0.51
0.99
0.020 0.039
1.14
1.40
0.045 0.055
0.40
0.74
0.016 0.029
1.14
1.40
0.045 0.055
8.38
9.40
0.330 0.370
8.00
8.89
0.315 0.350
2.3
0.091
9.65
10.41 0.380 0.410
6.22
8.50
0.245 0.335
2,54 BSC
0,100 BSC
4.28
0.169
14.61 15.88 0.575 0.625
1.78
2.79
0.070 0.110
1.02
1.68
0.040 0.066
typ.
typ.
0.040
0.002
0.02
0.0008
H
D1
3.05
(0.120)
9.02
(0.355)
All dimensions conform with
and/or within JEDEC standard.
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
Recommended min. foot print
1
3
4
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131029a
© 2013 IXYS all rights reserved
DSEP12-12AZ
Fast Diode
40
35
30
T
VJ
= 25°C
100°C
150°C
3.0
2.5
2.0
T
VJ
= 100°C
V
R
= 600 V
50
T
VJ
= 100°C
V
R
= 600 V
40
I
F
25
[A]
20
15
10
5
0
0
1
2
V
F
[V]
3
4
Q
r
1.5
I
F
= 30 A
15 A
7.5 A
I
RM
30
[A]
20
I
F
= 30 A
15 A
7.5 A
[μC]
1.0
0.5
0.0
100
10
0
1000
0
200
400
600
800
1000
-di
F
/dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt
180
120
-di
F
/dt [A/μs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
1.2
Fig. 1 Forward current
I
F
versus V
F
2.0
T
VJ
= 100°C
V
R
= 600 V
T
VJ
= 100°C
I
F
= 15 A
1.5
160
80
0.8
t
rr
K
f
1.0
I
RM
140
[ns]
0.5
Q
r
I
F
= 30 A
15 A
7.5 A
V
FR
[V]
40
t
fr
[μs]
0.4
120
V
FR
t
fr
0.0
0
40
80
120
160
100
0
200
400
600
800
1000
0
0
200
400
600
800
0.0
1000
T
VJ
[°C]
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
10
-di
F
/dt [A/μs]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
-di
F
/dt [A/μs]
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
1
Z
thJC
0.1
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.9084
0.3497
0.3419
t
i
(s)
0.0052
0.0003
0.0165
[K/W]
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20131029a
© 2013 IXYS all rights reserved
京公网安备 11010802033920号
EEWORLD
