DSEP60-12AR
HiPerFRED
V
RRM
I
FAV
t
rr
=
=
=
1200 V
60 A
40 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP60-12AR
Backside: isolated
3
1
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very short recovery time
●
Improved thermal behaviour
●
Very low Irm-values
●
Very soft recovery behaviour
●
Avalanche voltage rated for reliable operation
●
Soft reverse recovery for low EMI/RFI
●
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode
●
Rectifiers in switch mode power
supplies (SMPS)
●
Uninterruptible power supplies (UPS)
Package:
ISOPLUS247
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Epoxy meets UL 94V-0
●
Soldering pins for PCB mounting
●
Backside: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161005a
© 2016 IXYS all rights reserved
DSEP60-12AR
Fast Diode
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current, drain current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 150 °C
T
VJ
= 175 °C
d = 0.5
T
VJ
= 175 °C
1.08
9.4
0.25
T
C
= 25°C
t = 10 ms; (50 Hz), sine; V
R
= 0 V
V
R
= 600 V f = 1 MHz
I
F
=
60 A; V
R
= 600 V
T
VJ
= 45°C
T
VJ
= 25°C
T
VJ
= 25 °C
T
VJ
= 100 °C
T
VJ
= 25 °C
T
VJ
= 100 °C
-di
F
/dt = 200 A/µs
30
13
20
80
220
230
500
V
mΩ
K/W
W
A
pF
A
A
ns
ns
min.
typ.
max. Unit
1200
V
1200
650
2.5
2.66
3.18
1.81
2.40
60
V
µA
mA
V
V
V
V
A
max. non-repetitive reverse blocking voltage
V
R
= 1200 V
V
R
= 1200 V
I
F
=
I
F
=
60 A
60 A
forward voltage drop
I
F
= 120 A
I
F
= 120 A
I
FAV
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
C
J
I
RM
t
rr
average forward current
T
C
= 85 °C
rectangular
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
junction capacitance
max. reverse recovery current
0.65 K/W
reverse recovery time
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161005a
© 2016 IXYS all rights reserved
DSEP60-12AR
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
F
C
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting force with clip
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
ISOPLUS247
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-55
-55
-55
typ.
max.
70
175
150
150
Unit
A
°C
°C
°C
g
N
mm
mm
V
V
6
20
5.4
4.1
3600
3000
120
Product Marking
Logo
Part No.
Assembly Line
Assembly Code
Date Code
IXYS
ISOPLUS®
XXXXXXXXX
Zyyww
abcd
Ordering
Standard
Ordering Number
DSEP60-12AR
Marking on Product
DSEP60-12AR
Delivery Mode
Tube
Quantity
30
Code No.
481939
Similar Part
DSEP60-12A
DHG60I1200HA
DSEP60-12B
Package
TO-247AD (2)
TO-247AD (2)
TO-247AD (2)
Voltage class
1200
1200
1200
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Fast
Diode
* on die level
T
VJ
= 175 °C
V
0 max
R
0 max
1.08
6.8
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161005a
© 2016 IXYS all rights reserved
DSEP60-12AR
Outlines ISOPLUS247
A
E
E1
D2
A2
Q
Dim.
1
2
b4
3
A
A1
A2
b
b2
b4
c
D
D1
D2
D3
E
E1
e
L
L1
Q
R
W
Millimeter
min
max
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.20
2.92
3.24
0.61
0.83
20.80
21.34
15.75
16.26
1.65
2.15
20.30
20.70
15.75
16.13
13.21
13.72
10.90 BSC
19.81
20.60
3.81
4.38
5.59
6.20
4.25
5.50
-
0.10
Inches
min
max
0.190
0.205
0.090
0.100
0.075
0.085
0.045
0.055
0.075
0.087
0.115
0.128
0.024
0.033
0.819
0.840
0.620
0.640
0.065
0.085
0.799
0.815
0.620
0.635
0.520
0.540
0.429 BSC
0.780
0.811
0.150
0.172
0.220
0.244
0.167
0.217
-
0.004
R
L
L1
2x b2
2x b
c
A1
e
D3
D
D1
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD
gemäß JEDEC außer Schraubloch und L
max.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-247 AD except screw hole and except L
max.
W
3
1
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161005a
© 2016 IXYS all rights reserved
DSEP60-12AR
Fast Diode
100
T
VJ
= 150°C
100°C
25°C
10
T
VJ
= 100°C
V
R
= 600 V
8
I
F
= 120 A
60 A
30 A
80
I
F
= 120 A
60 A
30 A
100
T
VJ
= 100°C
V
R
= 600 V
80
I
F
60
[A]
40
Q
r
6
[µC]
4
I
R
60
[A]
40
20
2
20
0
0
1
2
3
0
100
0
1000
0
200
400
600
800
1000
V
F
[V]
Fig. 1 Forward current
I
F
versus V
F
-di
F
/dt [A/µs]
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt
280
120
-di
F
/dt [A/µs]
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
2.0
T
VJ
= 100°C
V
R
= 600 V
1.2
T
VJ
= 100°C
I
F
= 60 A
1.5
240
t
r
K
f
1.0
I
RM
0.5
Q
r
I
F
= 120 A
60 A
30 A
80
0.8
V
FR
[V]
[ns]
200
t
rr
[µs]
40
0.4
V
FR
0.0
0
40
80
120
160
160
0
200
400
600
800
1000
0
0
200
400
600
800
t
rr
0.0
1000
T
VJ
[°C]
Fig. 4 Typ. dynamic parameters
Q
r
, I
RM
versus T
VJ
0.8
-di
F
/dt [A/µs]
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
-di
F
/dt [A/µs]
Fig. 6 Typ peak forward voltage
V
FR
and t
fr
versus di
F
/dt
0.6
Z
thJC
0.4
Constants for Z
thJC
calculation:
i
1
2
3
4
R
thi
(K/W)
0.0500
0.1000
0.2000
0.3000
t
i
(s)
0.0020
0.0050
0.0400
0.1800
[K/W]
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20161005a
© 2016 IXYS all rights reserved
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