DSS 2x160-01A
Power Schottky Rectifier
Non isolated
I
FAVM
= 2x160 A
V
RRM
= 100 V
V
F
= 0.81 V
V
RSM
V
100
V
RRM
V
100
Type
A2
miniBLOC, SOT-227 B
Anode 2
DSS 2x160-01A
A1
Anode 1
Common cathode
Symbol
I
FRMS
I
FAVM
I
FAVM
I
FSM
E
AS
I
AR
(dv/dt)
cr
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Symbol
I
R
V
F
Conditions
T
C
= 95°C; rectangular, d = 0.5
T
C
= 95°C; rectangular, d = 0.5; per device
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
I
AS
= 15 A; L = 100 µH; T
VJ
= 25°C; non repetitive
V
A
=1.5 • V
RRM
typ.; f=10 kHz; repetitive
Maximum Ratings
200
160
320
1400
11.3
1.5
5000
-40...+150
150
-40...+150
A
A
A
A
mJ
A
V/µs
°C
°C
°C
W
Features
• International standard package
miniBLOC
• Epoxy meets UL 94V-0
• Very low V
F
• Extremely low switching losses
• Low I
RM
-values
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
T
C
= 25°C
mounting torque (M4)
terminal connection torque (M4)
typical
Conditions
V
R
= V
RRM
;
V
R
= V
RRM
;
I
F
= 160 A;
I
F
= 160 A;
I
F
= 320 A;
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
0.15
410
1.1-1.5/9-13 Nm/lb.in.
1.1-1.5/9-13 Nm/lb.in.
30
g
Characteristic Values
typ.
max.
4
40
0.81
0.98
1.08
0.30
mA
mA
V
V
V
K/W
K/W
Dimensions see Outlines.pdf
R
thJC
R
thCH
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
IXYS reserves the right to change limits, Conditions and dimensions.
© 2005 IXYS All rights reserved
1-2
515
DSS 2x160-01A
400
A
100
I
F
I
R
100
mA
pF
10
T
VJ
=150°C
125°C
10000
C
T
1
100°C
T
VJ
=
150°C
125°C
25°C
1000
10
0.1
75°C
50°C
0.01
25°C
T
VJ
= 25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 V
V
F
0.001
0
20
40
60
80 V 100
V
R
100
0
20
40
60
80 V 100
V
R
Fig. 1 Max. forward voltage
drop characteristics
240
A
200
I
F(AV)
160
120
80
40
20
0
0
40
80
T
C
120 C 160
0
d=0.5
DC
140
P
(AV)
120
100
80
60
40
180
W
160
Fig. 2 Typ. reverse current I
R
vs. reverse voltage V
R
10000
Fig. 3 Typ. junction capacitance C
T
versus reverse voltage V
R
A
I
FSM
d=
DC
0.5
0.33
0.25
0.17
0.08
1000
0
50
100
I
F(AV)
150 A 200
100
10
100
1000 µs 10000
t
P
Fig. 4 Avg. forward current I
F(AV)
vs. case temperature T
C
0.4
K/W
Z
thJC
0.1
D=0.5
0.33
0.25
0.17
0.08
Fig. 5 Forward power loss characteristics
Single Pulse
(Thermal Resistance)
0.01
0.001
DSS2x160-01A
Note: All curves are per diode
0.01
0.1
1s
t
10
Fig. 6 Transient thermal impedance junction to case at various duty cycles
IXYS reserves the right to change limits, Conditions and dimensions.
515
© 2005 IXYS All rights reserved
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